IRG5K75HH06E Allicdata Electronics
Allicdata Part #:

IRG5K75HH06E-ND

Manufacturer Part#:

IRG5K75HH06E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 600V 75A POWIR ECO 2
More Detail: IGBT Module Full Bridge Inverter 600V 140A 330W C...
DataSheet: IRG5K75HH06E datasheetIRG5K75HH06E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 140A
Power - Max: 330W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR ECO 2™ Module
Supplier Device Package: POWIR ECO 2™
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Integrated Gate-Commutated Thyristors (IGCTs) are part of a larger family of transistors such as Metal-Oxide Semiconductor Field-Effect Transistor (MOSFETs), Insulated Gate Bipolar Transistor (IGBTs), and MOS Controlled Thyristor (MCTs). The IRG5K75HH06E is a state-of-the-art IGBT module, which can be used for a variety of applications. Its primary application field lies within the field of power electronics, where it can be used in various applications including high-power switching, motor control, power factor correction, and more.

The IRG5K75HH06E module consists of a single IGBT chip and six diodes which are all connected together in a compact package. It has low switching and conduction losses, and is capable of providing high current, up to 2000 Amps. The module has a maximum operating voltage of 1200V, making it suitable for a wide range of applications.

The working principle of the IRG5K75HH06E module is based on the same basic principle as other IGBTs. It is composed of two transistors, a p-channel and an n-channel MOSFET, which are interconnected in an H-bridge arrangement. When a voltage is applied to the gate of the IGBT, it turns on and allows current to flow from the n-channel to the p-channel transistor. The IGBT acts as if it is a switch that can be turned on or off, allowing the user to control the current flow through the device.

In terms of applications, the IRG5K75HH06E module can be used in a wide range of applications. It can be used for power conversion, motor control, DC/DC converters, and more. In particular, the module can be used for high-power switching applications, such as solar panel array or motor control systems, where it can provide fast switching and minimum losses. It can also be used for power factor correction, which can help reduce the amount of energy consumed by a system.

As a result, the IRG5K75HH06E module can be a great choice for a variety of applications that require efficient, reliable, and high-power switching. Its state-of-the-art design and features make it a great choice for high-power applications. The module is easy to use and provides a reliable and cost-effective solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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