IRG5U150HF12B Allicdata Electronics
Allicdata Part #:

IRG5U150HF12B-ND

Manufacturer Part#:

IRG5U150HF12B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 1200V 150A POWIR 62
More Detail: IGBT Module Half Bridge 1200V 260A 1100W Chassis ...
DataSheet: IRG5U150HF12B datasheetIRG5U150HF12B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 260A
Power - Max: 1100W
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR® 62 Module
Supplier Device Package: POWIR® 62
Description

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The IRG5U150HF12B is a member of an expansive series of IGBT modules created specifically for automotive applications. With its combination of high-speed switching and unparalleled power handling, the IRG5U150HF12B offers an exceptional range of performance characteristics and engineering flexibility.

At the heart of the IRG5U150HF12B module is an Insulated Gate Bipolar Transistor (IGBT) construction that leverages the inherent capability of transistors to switch very quickly and efficiently between two states: on and off. In the on-state, electrical current is allowed to pass through the transistor, and in the off-state the transistor blocks any current from flowing.

By controlling the amount of current that can pass through an IGBT, the module can provide a wide range of performance advantages such as high switching speeds and higher power handling. With the IRG5U150HF12B, engineers can achieve both with a single module, making it the ideal choice for automotive applications.

The IRG5U150HF12B module is designed to operate at up to 150 Amperes and 1200 Volts in both peak and continuous currents. This makes it highly efficient in terms of power handling, as compared to traditional transistors. Additionally, the module is built with superior thermal management, allowing it to operate at higher temperatures while maintaining great performance.

In terms of application field and working principle, the IRG5U150HF12B module is specifically intended for use in automotive applications where the need for high-speed switching or high power handling is paramount. This can include applications like vehicle control systems, engine management systems, or other automotive electronics that rely on efficient and high-performance control systems.

The IRG5U150HF12B module is capable of switching at extremely high speeds, thanks to the superior cut-off technology used to construct each module. This also allows the module to be used in applications that require one-shot or multiple switching operations, in addition to traditional on-off control of electrical current. Moreover, since the module was designed with superior thermal management, it can handle higher power load entities with ease.

The IRG5U150HF12B module is an ideal choice for automotive applications due to its combination of high-speed switching, power handling, and superior thermal management. With these core benefits, engineers and automotive engineers can now achieve higher levels of performance and efficiency in their applications with the IRG5U150HF12B.

The specific data is subject to PDF, and the above content is for reference

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