IRG5U200SD12B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRG5U200SD12B is a Insulated Gate Bipolar Transistor (IGBT) module designed for use in high-power, high-frequency power conversion applications. It is one of the latest developments in the field of power electronics from Infineon Technologies and a perfect choice for applications such as motor drives, uninterruptible power supplies and switch-mode power supplies. The device is also suitable for applications in renewable energy sources such as Solar and Wind power.

The module consists of two IGBTs and one freewheeling diode housed in a single DI-Pak package. The two IGBTs share the same emitter for space savings, and the freewheeling diode is soft-connected to each collector for protection. The IRG5U200SD12B offers a maximum collector-emitter blocking voltage of 1200V, a collector current of 200A and a collector power dissipation of up to 750W. The device has an operating temperature range of -40°C to 150°C, and features built-in temperature and current sensing and protection, as well as short circuit protection and over-voltage protection. The module also offers high reliability and long-term stability.

In terms of commutation, the IGBTs in the module can be driven with a low voltage control voltage such as +15V. This aids fast turn-on and turn-off times, allowing the IRG5U200SD12B to handle high switching frequencies, up to 20kHz. The soft free-wheeling diode also helps to reduce switching losses and enhances the system efficiency.

Overall, the IRG5U200SD12B is an excellent choice for high-power and high-frequency power conversion applications. Its high voltage and high current ratings, along with its built-in protection features, make it an ideal solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference