IS61NLP25636A-200B3LI-TR Allicdata Electronics
Allicdata Part #:

IS61NLP25636A-200B3LI-TR-ND

Manufacturer Part#:

IS61NLP25636A-200B3LI-TR

Price: $ 8.86
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 9M PARALLEL 165TFBGA
More Detail: SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral...
DataSheet: IS61NLP25636A-200B3LI-TR datasheetIS61NLP25636A-200B3LI-TR Datasheet/PDF
Quantity: 1000
2000 +: $ 8.05154
Stock 1000Can Ship Immediately
$ 8.86
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3.1ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TFBGA
Supplier Device Package: 165-TFBGA (13x15)
Description

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IS61NLP25636A-200B3LI-TR is a special type of memory that is used in a wide range of applications. It is an ideal choice for users looking for a reliable and versatile memory device. In this article, we will discuss the application field and working principle of the IS61NLP25636A-200B3LI-TR.

The IS61NLP25636A-200B3LI-TR is a synchronous dual-port random access memory that has been specially designed for use in embedded systems due to its low power consumption, high performance, and small form factor. It is manufactured by Integrated Silicon Solution, Inc., a leading semiconductor manufacturer.

The IS61NLP25636A-200B3LI-TR is targeted at applications such as automotive, industrial and consumer audio-visual, networking and medical applications. It offers a high-bandwidth memory interface with low power consumption, making it suitable for a wide range of applications. The memory device is available in a range of densities from 64Kb up to 8Mb. The IS61NLP25636A-200B3LI-TR is a synchronous random access memory that is capable of handling data throughput speeds of up to 400 MBytes/s.

The integrated circuit (IC) of the IS61NLP25636A-200B3LI-TR is based on a 0.13-micron process technology, providing a die size of less than 1.3 mm times 1 mm. This IC is fabricated using double-levelMetal (DTM). The device is capable of supporting multiple power savings to reduce power consumption. It also provides a frequency compensation feature that allows the IC to run at maximum speed while remaining stable and reliable.

The IS61NLP25636A-200B3LI-TR has a 128-bit internal data bus that is used to transfer data from one memory port to the other. The memory device is capable of supporting up to 32 independent addresses. It also supports multiple clock speeds, allowing it to run at a maximum speed of 400 MHz. It also has an address latch configuration that allows the device to access four 8-bit registers.

The IS61NLP25636A-200B3LI-TR has both host and memory control interfaces. The host interface controls the transfer of data between the host and the memory device. The memory control interface is used to control the functions of the internal registers. The device also has an interrupt controller which can be used to generate an interrupt when a pre-specified memory address is accessed or when a specific command is executed.

The IS61NLP25636A-200B3LI-TR is an ideal memory device for applications that require high-speed performance with low power consumption. It is capable of providing data throughput speed of up to 400 MBytes/s. It is also a reliable and versatile memory device that is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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