IS61NLP51236B-200B3LI-TR Allicdata Electronics
Allicdata Part #:

IS61NLP51236B-200B3LI-TR-ND

Manufacturer Part#:

IS61NLP51236B-200B3LI-TR

Price: $ 9.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 165TFBGA
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: IS61NLP51236B-200B3LI-TR datasheetIS61NLP51236B-200B3LI-TR Datasheet/PDF
Quantity: 1000
2000 +: $ 8.39888
Stock 1000Can Ship Immediately
$ 9.23
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)
Description

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Memory is an integral part of a computer system, and an important component of any system. The IS61NLP51236B-200B3LI-TR is a type of memory that is used in a variety of applications. This memory chip is a Non-Volatile memory device that is used to store data that needs to be retained over a period of time even when the power is off.The IS61NLP51236B-200B3LI-TR is a Non-Volatile memory chip that is used in a variety of applications. It is a Dynamic Random Access Memory (DRAM) device with a capacity of 512KB (256K x 16 bits) that uses three or four power supply voltages. This chip is ideal for applications that require a high-density memory device, such as cellular phones, MP3 players, digital cameras and other portable electronic devices. It offers an excellent combination of fast access times, low power consumption and low manufacturing cost.The working principle of the IS61NLP51236B-200B3LI-TR is based on the concept of dynamic random access memory (DRAM). DRAM is a type of memory that is used in nearly all electronics and computer systems. It consists of a number of electrical circuits called cells or capacitors, which are arranged in a matrix of rows and columns. Each cell stores a single bit of data. The data is accessed using a set of signals, with different combinations of signals being used to access different cells.The data is read and written to the chip using the memory address pins and the data pins. When data is requested, the memory address pins are used to specify the address of the cell that needs to be read from or written to. The data pins are then used to transfer the data between the chip and the device. The device also contains an input/output buffer, which is used to store the data until it is sent out to the device.The IS61NLP51236B-200B3LI-TR is a high-performance memory device that is used in a variety of applications. It offers a fast access time of 220ns and a low power consumption of 2.2V. It is also cost-efficient and has a low-manufacturing cost. Due to these features, this memory chip is ideal for applications that require a large amount of memory or data storage.

The specific data is subject to PDF, and the above content is for reference

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