| Allicdata Part #: | IS61LV5128AL-10BLI-TR-ND |
| Manufacturer Part#: |
IS61LV5128AL-10BLI-TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ISSI, Integrated Silicon Solution Inc |
| Short Description: | IC SRAM 4M PARALLEL 36MINIBGA |
| More Detail: | SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral... |
| DataSheet: | IS61LV5128AL-10BLI-TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 4Mb (512K x 8) |
| Write Cycle Time - Word, Page: | 10ns |
| Access Time: | 10ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3.135 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 36-TFBGA |
| Supplier Device Package: | 36-miniBGA (8x10) |
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The IS61LV5128AL-10BLI-TR is a 128K x 8-bit high-speed CMOS Static RAM organized as 16,384 words by 8 bits. It is fabricated using high-performance CMOS technology with a low power standby operation of 2mA (max). The IS61LV5128AL-10BLI-TR also comes with an asynchronous page-mode feature for fast and system-friendly read and write operations. Features include an asynchronous page-mode logic with corresponding components timing the addressing, data input and output pins, output enable, write enable and chip enable inputs. The asynchronous page-mode feature allows fast and system-friendly read and write operations at high speed.
The IS61LV5128AL-10BLI-TR is designed primarily for applications like digital processing, storage devices, video game systems, and embedded systems. It is not suitable for applications where high frequency operation is required.
The IS61LV5128AL-10BLI-TR is used in static RAM applications where power consumption is critical and fast access time is required. The IS61LV5128AL-10BLI-TR is the ideal choice for devices where low power consumption and high performance are required, such as personal idle machines, modem cards, and embedded computer systems.
The IS61LV5128AL-10BLI-TR is organized as 16384 words by 8 bits, and it offers read and write times of 10 - 45 ns with a cycle time of 10 - 45 ns. This static RAM comes with an asynchronous page-mode feature for fast and system-friendly read and write operations. This RAM offers a very low static current of 2 mA (max), and a write enable time of 150 ns (max).
The working principle of the IS61LV5128AL-10BLI-TR is based on its two-part operation: the basic operation is simultaneous read or write command and the page-mode operation is for faster access. The read or write command is sent to the chip which then supplies the data on the output pins. In page mode, the read or write command is broadcast to all active memory locations, which reduces read and write times. The IS61LV5128AL-10BLI-TR also uses a single power supply and multiple voltage levels to ensure efficient operation.
The IS61LV5128AL-10BLI-TR is an ideal choice for a wide range of application projects, ranging from basic hobby projects to sophisticated industrial machines. Its wide operating voltage range makes it suitable for a broad variety of applications. The low power consumption of this RAM makes it ideal for power-sensitive applications while the fast access times provide the needed performance.
The specific data is subject to PDF, and the above content is for reference
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IS61LV5128AL-10BLI-TR Datasheet/PDF