IS61DDP2B251236A-400M3L Allicdata Electronics
Allicdata Part #:

IS61DDP2B251236A-400M3L-ND

Manufacturer Part#:

IS61DDP2B251236A-400M3L

Price: $ 33.92
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 165LFBGA
More Detail: SRAM - Synchronous, DDR IIP Memory IC 18Mb (512K x...
DataSheet: IS61DDP2B251236A-400M3L datasheetIS61DDP2B251236A-400M3L Datasheet/PDF
Quantity: 1000
105 +: $ 30.83070
Stock 1000Can Ship Immediately
$ 33.92
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR IIP
Memory Size: 18Mb (512K x 36)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)
Description

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Memory refers to the data storage elements composed of transistors and capacitors on the computer\'s integrated circuit. IS61DDP2B251236A-400M3L is a synchronous Dynamic Random-Access Memory (SDRAM). It is widely used in today\'s industry and has become one of the most important components of most computers and other digital memory products.

IS61DDP2B251236A-400M3L is a large-capacity high-density single 16-bit data width dynamic RAM. It is based on two independent banks of 64K x 16-bit SDRAMs organized in four-bank interleaving configurations. This provides the highest burst throughput performance and reduces memory latency as compared to other industry standard DRAMs. The device consists of an array of 2048K x 16-bit internally configured as eight banks of eight rows and eight columns. Each column consists of two 4-bit burst latches that are used to burst data from each row.

IS61DDP2B251236A-400M3L is a fast burst-access device and offers very low-power consumption. It supports multiple-burst accesses at a rate of up to 400 Mbps, making it suitable for use in applications requiring high memory access rates such as multi-processor systems, graphics systems and advanced communication applications.

In addition, this device offers excellent thermal performance, which makes it suitable for use in high-speed systems that have high thermal loads and limited space. The device also features an extended temperature range which makes it suitable for highly competitive applications that require operation over an extended temperature range.

The working principle of IS61DDP2B251236A-400M3L Memory is based on SDRAM technology. When the SDRAM is addressed, the most information can be read in a single cycle, which eliminates the need for multiple-read cycles. This technology improves the system performance by reducing the number of memory cycles required for an access compared to conventional DRAMs, which require multiple read/write cycles.

IS61DDP2B251236A-400M3L Memory has wide application fields, such as military, aerospace, industrial automation, robotics, telecommunications, communications, medical, and computer products. For example, it can be used in a computer system to store data, such as operating system boot-up information, operating system files, application files, and user data. It can also be used in a telecommunications system, such as a wireless base station, to support the data needs of mobile phone users. In addition, it can be used in industrial robots for assisting them in making decisions, controlling motion, and providing feedback information.

To sum up, IS61DDP2B251236A-400M3L Memory is a type of high-performance, fast access, low-power consumption and versatile memory device, suitable for a wide variety of applications. Its versatile features, such as extended temperature range and multiple burst accesses, make it an ideal choice for use in today\'s demanding applications.

The specific data is subject to PDF, and the above content is for reference

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