IS61LPS51236A-200TQI Allicdata Electronics
Allicdata Part #:

IS61LPS51236A-200TQI-ND

Manufacturer Part#:

IS61LPS51236A-200TQI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: IS61LPS51236A-200TQI datasheetIS61LPS51236A-200TQI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3.1ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS61LPS51236A-200TQI is a kind of memory, which has wide application fields across the industry. It is equipped with advanced features, making it suitable for use in a variety of situations. In this article, we will discuss the application field and working principle of this memory.

Application Field

IS61LPS51236A-200TQI is a high performance memory device, which is suitable for use in different sectors. It offers a wide range of operations, offering a reliable, secure and efficient data storage solution. Below are some of the application fields of this memory:

  • Consumer electronics
  • Medical systems
  • Industrial applications
  • Automotive systems
  • Aerospace systems
  • Communication networks

This memory device can be used in different kinds of applications where there is a need for data storage and retrieval. It is suitable for use in applications that require high data transfer rate, high data storage density and low power consumption. This memory device is also ideal for applications that require reliable data management and high performance.

Working Principle

IS61LPS51236A-200TQI is based on a synchronous dynamic random access memory (SDRAM) architecture. It is a type of random access memory (RAM) that operates in synchronous mode, meaning that it can access a memory location within a short period of time. The memory device also operates on a single voltage source, which reduces power consumption.

The memory device consists of a number of internal components, including an array of cells, sense amplifiers, row address decoder, column address decoder, and a logic array. Each cell is composed of two transistors and two capacitors that store the data in the form of electrical charge.

The data stored in the cells can be accessed using a row and column addressing scheme. When the row and column address is provided, the row address decoder selects the appropriate row and the column address decoder selects the appropriate cell. The data stored in the cell is then retrieved and provided to the data bus.

The IS61LPS51236A-200TQI memory also has a dedicated write port and an auto-precharge feature. The write port allows the user to write or store data in the memory, while the auto-precharge feature automatically prepares the memory for the next write cycle. This feature reduces the amount of power consumption, making the device more energy efficient.

IS61LPS51236A-200TQI is a high performance memory device that offers a wide range of features and applications in a variety of sectors. It is an ideal choice for applications that require fast, reliable data storage and retrieval. With its low power consumption and advanced features, this memory device is suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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