IS61NLF102418-6.5TQ-TR Allicdata Electronics
Allicdata Part #:

IS61NLF102418-6.5TQ-TR-ND

Manufacturer Part#:

IS61NLF102418-6.5TQ-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 18Mb (1M x 18) Parall...
DataSheet: IS61NLF102418-6.5TQ-TR datasheetIS61NLF102418-6.5TQ-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 6.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Description

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IS61NLF102418-6.5TQ-TR is a non-volatile memory that belongs to the family of dynamic random-access memories (DRAMs) that is released by Integrated Silicon Solution, Inc (ISSI). This memory device is a low-power, high-performance device that is designed for use in embedded systems, automotive and industrial applications.

Application Field

IS61NLF102418-6.5TQ-TR is suitable for applications that require high data retention reliability and low power consumption. It can be used in a variety of embedded systems, including automotive and industrial applications. The device is ideal for applications such as embedded control systems, data acquisition, real-time control, digital signal processing and motion control. It is also used in communication systems, test and measurement equipment, medical equipment, GPS systems and aerospace applications.

Working Principle

IS61NLF102418-6.5TQ-TR works on the principle of dynamic random-access memory (DRAM). DRAM is a type of memory that stores data in a series of capacitors which are charged or discharged to represent the data. The capacitors are connected to a row and column of memory cells, which act as the data bus. The DRAM device reads and writes data by changing the capacitors in the memory cells. The capacitors in each cell are charged and discharged periodically to refresh the data in the cells and this process is called refreshing.

When the device is read, a voltage is applied to the memory cell and the amount of current flowing through the cell determines the data contained in the cell. When the device is written, a voltage is applied to the cell and then the capacitors are charged or discharged to represent the data. Data is stored in the DRAM cells by changing the capacitance of the cell. This process is known as capacitance-based data storage.

IS61NLF102418-6.5TQ-TR has a 6.5ns cycle time, which is faster compared to other DRAM devices. It also has a power consumption as low as 6mW, making it extremely efficient for embedded applications. The device has low power-down and low self-refresh current, making it suitable for battery powered devices. The device also supports an extended temperature range from -55 to +105°C.

Conclusion

IS61NLF102418-6.5TQ-TR is a low-power, high-performance non-volatile memory device that is suitable for a variety of embedded systems, automotive and industrial applications. It works on the principle of DRAM and has a 6.5ns cycle time and low power consumption. It is capable of storing data capacitance-based and supports an extended temperature range from -55 to +105°C. This device is highly reliable and efficient for embedded system applications.

The specific data is subject to PDF, and the above content is for reference

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