IS61NLF51218A-7.5B3I-TR Allicdata Electronics
Allicdata Part #:

IS61NLF51218A-7.5B3I-TR-ND

Manufacturer Part#:

IS61NLF51218A-7.5B3I-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 9M PARALLEL 165TFBGA
More Detail: SRAM - Synchronous Memory IC 9Mb (512K x 18) Paral...
DataSheet: IS61NLF51218A-7.5B3I-TR datasheetIS61NLF51218A-7.5B3I-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TFBGA
Supplier Device Package: 165-TFBGA (13x15)
Description

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IS61NLF51218A-7.5B3I-TR is a type of embedded non-volatile memory which is used to store data under extreme conditions. It is a 512Kb Non-Volatile RAM, manufactured by Integrated Silicon Solution (ISSI). ISSI is a world leader in the design, manufacturing, and distribution of high-performance ICs and memory solutions. The IS61NLF51218A-7.5B3I-TR exhibits superior durability and reliability, making it suitable for harsh environments and applications. It has several features that make it suitable for various scenarios, such as low power consumption in standby state, high writing speed, and wide temperature range. It also has a write-protect pin for preventing data corruption.

The IS61NLF51218A-7.5B3I-TR is an ideal choice for embedded applications where data needs to be preserved even in extreme temperature and power environments. It is especially suited for automotive and industrial applications, where high speed and low power consumption is essential. The device can handle temperatures ranging from -40 to +125C, making it a good choice for industrial and automotive environments. Additionally, the low-power standby state maximizes power efficiency in extreme situations. The device also has a wide range of speed grades, allowing it to be used in fast data processing applications as well.

The IS61NLF51218A-7.5B3I-TR uses a NAND flash memory cell architecture. This allows it to provide improved reliability over NOR flash architecture, while also optimizing power consumption. The NAND flash cells are organized into blocks, and each block can be individually erased and programmed to store data. This makes it an ideal choice for efficient data storage. The device also incorporates an on-chip state-machine to control the erasing and programming operations. The on-chip ECC algorithm also ensures data integrity even with frequent accesses.

The device can be powered from a single +3.3V supply, and it consumes very little power during standby mode. The device has a wide write-speed range and can support up to 9-bit codes, allowing for fast write cycles. The ECC algorithm also enables faster data accesses with fewer errors. The device also includes a write-protect function, which can be used to protect the data against accidental overwrites.

The IS61NLF51218A-7.5B3I-TR is a highly reliable, low power, and high-speed memory solution. It is ideal for applications that require data storage in extreme conditions. The device can handle temperatures ranging from -40 to +125C and can be powered from a single +3.3V supply. It is an ideal choice for automotive and industrial applications, where high speed and low power consumption is essential. Additionally, the device also has a write-protect function for preventing data corruption.

The specific data is subject to PDF, and the above content is for reference

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