ISL9V5036S3S Allicdata Electronics
Allicdata Part #:

ISL9V5036S3S-ND

Manufacturer Part#:

ISL9V5036S3S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 390V 46A 250W TO263AB
More Detail: IGBT 390V 46A 250W Surface Mount TO-263AB
DataSheet: ISL9V5036S3S datasheetISL9V5036S3S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: EcoSPARK®
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 390V
Current - Collector (Ic) (Max): 46A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Power - Max: 250W
Switching Energy: --
Input Type: Logic
Gate Charge: 32nC
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1 kOhm, 5V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Base Part Number: ISL9V5036
Description

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ISL9V5036S3S Application Field and Working Principle

The ISL9V5036S3S is a single, high-voltage, insulated-gate bipolar transistor (IGBT) that can be used in various applications. It is an ideal choice for high-current, low voltage applications. This IGBT is capable of blocking both reverse and forward eletrical current and can be used as a switch in many circuit configurations. In addition, it also provides superior dynamic performance, high reliability, and excellent thermal characteristics.

The ISL9V5036S3S is specifically designed for applications such as motor control, lighting, industrial automation and other power semiconductor applications. This IGBT is especially suitable for inverters, AC drives and rectifiers. It has been designed to operate in high frequency environments and offers an increased surge current capability that further extends the applications possibilities.

The operating voltage of the ISL9V5036S3S is 500V, and it has a collector-emitter saturation voltage of 1.4V. The collector current rating is 90A and the max power dissipation is 50W. It features a very low ON-state voltage drop of 0.6V. Additionally, it has a high-speed switching of 100kHz and can withstand high temperatures up to 175°C.

In addition to its robust thermal and dynamic performance, the ISL9V5036S3S also offers low switching losses and low noise operation. This makes it a great choice for many applications including solar PV inverters, UPS inverters and power supplies.

Working Principle

The ISL9V5036S3S has an insulated-gate construction that is based on the P-N-P-N junction structure. The device has an internal gate resistance that is equivalent to the gate-versus-source voltage. There is a high current gain capability and low on-state voltage drop that are achieved using the insulated gate construction.

When a forward bias is applied to the Gate-Source junction, holes in the P-base region are injected into the N-base region and the IGBT is turned on. It has a very low threshold voltage and is capable of providing very high blocking voltage.

In addition, this IGBT provides a fast turn-on fraction and low switch-on losses. This helps to reduce switching losses and can also be used for resonant switching applications.

In order to operate the ISL9V5036S3S, a gate driver is required. It can be powered from either a DC voltage source or from an AC voltage source. The gate is driven from the input signal, and the base current is supplied to the gate for turn-on. The voltage on the gate is controlled via the gate driver, and the gate current is controlled by the gate driver.

The ISL9V5036S3S is a great choice for automotive, industrial and consumer applications. With its robust thermal and dynamic performance, low switching losses, and low noise operation, this IGBT is an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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