IXDN509D1T/R Allicdata Electronics

IXDN509D1T/R Integrated Circuits (ICs)

Allicdata Part #:

IXDN509D1TR-ND

Manufacturer Part#:

IXDN509D1T/R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC GATE DRIVER SGL 9A 6-DFN
More Detail: Low-Side Gate Driver IC Non-Inverting 6-DFN (4x5)
DataSheet: IXDN509D1T/R datasheetIXDN509D1T/R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Base Part Number: IXD*509
Supplier Device Package: 6-DFN (4x5)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 25ns, 23ns
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 9A, 9A
Series: --
Voltage - Supply: 4.5 V ~ 30 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Channel Type: Single
Driven Configuration: Low-Side
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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PMIC - Gate DriversIntegrated Power Devices, Inc. (IXDN509D1T/R) gate driver is a compact, low-cost, high-performance integrated power device specifically designed for power-on and power-off control of high side MOSFETs. The driver provides ease of use through a combination of integrated functions and a simple logic level control interface, taking up minimal board space while offering high power capability. Application FieldIXDN509D1T/R gate driver is a quality integrated device that finds application in power supplies, industrial automation, motor drives, inverters, and other applications demanding quality performance over the life of their product. It is also used in various automotive and avionics applications. IXDN509D1T/R is suitable for applications requiring fast switching and low power consumption. Advantages of using IXDN509D1T/R include high efficiency, low EMI, fast-controlled switching, and high operating frequency capability. IXDN509D1T/R features an adjustable operating frequency and pulse width from 10-500kHz and 1-10 nanoseconds respectively, allowing for improved design flexibility and increased system efficiency. IXDN509D1T/R also features diagnostic functions, including an input pin compatible with logic inputs, LED indicator for monitoring the output of the device and an open-drain fault indicator.Working Principle The IXDN509D1T/R integrated power device operates based on pulse width modulation (PWM) principles. The device produces a high-side switching MOSFET gate signal in response to an input control signal, either TTL or CMOS-compatible digital logic. The TTL/CMOS compatible digital logic can be used to control the on/off times of the switching device. The output pulse width and frequency can be adjusted according to user requirements. When the input logic signal is low, the output of the gate drives is low, which enables the low-side MOSFET and turns the high side MOSFET off. Also, when the input logic signal is high, the output of the gate drives is high, which enables the high-side MOSFET and turns the low side MOSFET off. The high-side/low-side switching of the MOSFETs is controlled using the input level of the gate drive. The output pulse width and frequency can be adjusted through external components such as resistors for precise control.The IXDN509D1T/R can also incorporate a low-side NFET driver which is mounted in parallel with the high-side PMOS FET Driver while being used in a single-ended configuration. The NFET drivers is designed to prevent the load from experiencing an over-current condition while the PMOS FET driver is used to turn the load on/off. In addition, the IXDN509D1T/R is equipped with an over temperature protection feature that provides protection should the device heat up beyond a safe operational threshold. Furthermore, IXDN509D1T/R comes with protection features such a fault output, LED indicator, and an adjustable current limit to protect against output short-circuits, over-voltage, and over-temperature conditions. The IXDN509D1T/R also features an adjustable operating frequency from 10-500kHz and adjustable pulse width from 1-10 nanoseconds for precise control over the output. ConclusionThe IXDN509D1T/R integrated power device is a low-cost, high-performance integrated power device specifically designed for power-on and power-off control of high-side MOSFETs. It features an adjustable operating frequency and pulse width from 10-500kHz and 1-10 nanoseconds respectively for precise control, diagnostic functions for monitoring performance, additional protection features, and low power consumption. The IXDN509D1T/R gate driver is suitable for applications requiring fast switching and high performance, efficient power delivery, including power supplies, industrial automation, motor drives, and inverters.

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