IXDN602SI Allicdata Electronics
Allicdata Part #:

CLA352-ND

Manufacturer Part#:

IXDN602SI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS Integrated Circuits Division
Short Description: MOSFET N-CH 2A DUAL LO SIDE 8-SO
More Detail: Low-Side Gate Driver IC Non-Inverting 8-SOIC-EP
DataSheet: IXDN602SI datasheetIXDN602SI Datasheet/PDF
Quantity: 384
Stock 384Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP
Description

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High performance gate drivers are key components in power management integrated circuit (PMIC). IXDN602SI is a versatile gate driver for low side N-Channel MOSFETs for high-side configurations of up to +40V. This device is widely applied in many industrial applications.

IXDN602SI Application Fields

The IXDN602SI offers numerous advantages such as its ultra-low start-up current of 40mA, adjustable switching frequency of up to 10MHz and wide operating range from -40°C to +125°C. Such characteristics make the device ideally suited for a wide range of low side MOSFET applications such as:

  • High-side switching in industrial and automotive applications
  • Power management and control in servers, data centers, and storage systems
  • Home appliances such as ovens, microwaves, and refrigerators
  • Safety and security systems such as fire alarms and security cameras
  • Lighting solutions including LED drivers, high-intensity discharge (HID) drivers, and fluorescent driver solutions

IXDN602SI Working Principle

The IXDN602SI is a low-power MOSFET gate driver designed to deliver outstanding performance in harsh conditions. It features an adjustable current-limit range of 10mA to 60mA, allowing users to adjust the turn-on and turn-off speed of the low side N-Channel MOSFETs to best suit their application. The IXDN602SI also features adjustable under-voltage lockout, a 20kHz frequency limit, as well as short-circuit protection. Additionally, the device is also equipped with UVLO, LDO, thermal shutdown, and an adjustable soft-start feature for improved system performance and robustness.

At the heart of the IXDN602SI is an advanced driver architecture that consists of an input stage and a power output stage. The input stage delivers the gate voltage signal as a pulse-width modulated (PWM) signal to the power output stage. The power output stage then converts the PWM signal into a high current drive, allowing the low side N-Channel MOSFET to be driven with low start-up current levels and low power losses. The IXDN602SI also features an over-temperature protection circuit that protects the device from over-temperature conditions and ensures proper operation.

Conclusion

The IXDN602SI is a high performance low-side N-Channel MOSFET gate driver capable of driving up to +40V. The device is ideal for a wide range of low side MOSFET applications, offering adjustable switching frequency of up to 10MHz, adjustable current-limit range of 10mA to 60mA, and a wide operating range from -40°C to +125°C. Additionally, the IXDN602SI is equipped with UVLO, LDO, thermal shutdown, and adjustable soft-start feature for improved system performance and robustness.

The specific data is subject to PDF, and the above content is for reference

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