IXDN409SI Allicdata Electronics
Allicdata Part #:

IXDN409SI-ND

Manufacturer Part#:

IXDN409SI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC MOSFET DRVR 9A LOSIDE 8-SOIC
More Detail: Low-Side Gate Driver IC Non-Inverting 8-SOIC
DataSheet: IXDN409SI datasheetIXDN409SI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Base Part Number: IXD*409
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 10ns, 10ns
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 9A, 9A
Series: --
Voltage - Supply: 4.5 V ~ 35 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Channel Type: Single
Driven Configuration: Low-Side
Part Status: Obsolete
Packaging: Tube 
Description

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IXDN409SI is an integrated gate driver for field-effect transistors (FETs) in power management integrated circuit (PMIC) applications. The IXDN409SI provides a full, fast-response gate driver with two independent input sides. The IXDN409SI is suitable for use in 4-switch wave inverter applications and other power conversion applications.

The IXDN409SI helps drive FETs at frequencies of up to 700 kHz while reducing the number of discrete components. Its integrated, low on-resistance FETs provide improved efficiency, while its low power dissipation and high-current operation allow greater, faster switching. Its wide operating temperature range also makes it suitable for use in automotive and industrial applications.

The IXDN409SI features a self-discharge mode for balanced, low-side FETs which allows for bidirectional operation in synchronous rectification applications. The output voltage can be adjusted from 3.3 V to 25 V, and the device offers a low-leakage current of only 0.6 µA at 25 V. The IXDN409SI also has an overvoltage protection circuit, anti-ringing circuit, and a thermal shutdown feature.

The IXDN409SI features a built-in level shifter and control logic to minimize noise and electromagnetic interference (EMI). The device’s two-stage, high-side and low-side drivers feature slew-rate control to minimize overshoot and undershoot, along with a differential sensing circuit that helps reduce switching losses.

The IXDN409SI also has a logic-controlled current limit and the ability to detect short-circuit conditions in the output. Its integrated voltage-regulator allows the IXDN409SI to be used in applications requiring regulation of the output voltage. Its integrated, two-state outputs enable control of the power-supply output.

In summary, the IXDN409SI is a powerful and robust driver for use in field-effect transistor applications. It features a self-discharge mode for balanced, low-side FETs, making it suitable for use in synchronous rectification applications, along with anti-ringing, overvoltage protection, a logic-controlled current limit, and a thermal shutdown feature. The IXDN409SI is ideal for use in 4-switch wave inverter applications as well as other power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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