IXDN55N120D1

Series:	--
Part Status:	Active
IGBT Type:	NPT
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	100A
Power - Max:	450W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 55A
Current - Collector Cutoff (Max):	3.8mA
Input Capacitance (Cies) @ Vce:	3.3nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B

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IXDN55N120D1 is an insulated gate bipolar transistor (IGBT) module. It is part of the IXYNR series from IXYS Corporation. This series offers solutions for medium and high-voltage applications. IXDN55N120D1 is designed for operation with high voltages between 600 V and 1200 V. Its performance and reliability are improved due to the integration of anti-parallel fast recovery free-wheeling diodes and temperature monitoring within the module.Application FieldIXDN55N120D1 is well-suited for applications where high voltage, high power and high performance are necessary. Therefore, it is suitable for such applications like motor drives, solar inverters and PFC techniques, UPS systems, battery chargers, and rectifiers and converters.IXDN55N120D1 can also be used in light control systems, traction, wind power converters, welders and induction heating systems, frequency control systems, and other industrial automation systems.Working PrincipleThe working principle of IXDN55N120D1 is based on the principle of an insulated gate bipolar transistor (IGBT). It consists of an insulated gate that controls the current flow between two electrodes–the collector and the emitter. When a positive voltage is applied on the gate, the electrical field between the electrodes becomes stronger, allowing current to flow through the collector and the emitter. On the other hand, when a negative voltage is applied on the gate, the electrical field between the electrodes becomes weakened, thus cutting off the current flow.IXDN55N120D1 is i-mode IGBT and it has an integrated freewheeling diode pair and temperature monitoring circuit to increase the performance and reliability. While the diode pair helps to reduce the losses and losses due to reverse current by diverting it away from the IGBT, the integrated temperature sensor helps to monitor the conditions within the module. The IGBT can handle high voltage up to 1200V and the switching frequency can be adjusted according to the requirement. ConclusionIXDN55N120D1 is a medium-high voltage IGBT module from IXYS Corporation. It offers a variety of features and performance capabilities, making it suitable for a wide range of applications, such as motor drives, solar inverters, PFC techniques, UPS systems, battery chargers, and rectifiers and converters. It is also used in light control systems, traction, wind power converters, welders and induction heating systems, frequency control systems, and other industrial automation systems. Its working principle is based on the IGBT principle and is enhanced by the integration of anti-parallel fast recovery free-wheeling diodes and temperature monitoring within the module.

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