IXDN614PI Allicdata Electronics
Allicdata Part #:

IXDN614PI-ND

Manufacturer Part#:

IXDN614PI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS Integrated Circuits Division
Short Description: 14A 8 PIN DIP NON INVERTING
More Detail: Low-Side Gate Driver IC Non-Inverting 8-DIP
DataSheet: IXDN614PI datasheetIXDN614PI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 14A, 14A
Input Type: Non-Inverting
Rise / Fall Time (Typ): 25ns, 18ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
Description

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IXDN614PI is an integrated high-current P-channel MOSFET driver with a low total gate charge, which is suitable for high-side switching operations. It helps to reduce power consumption and increase high-side switch efficiency. IXDN614PI is a GaNFET-based gate driver with a gate-source voltage rating up to 30V, a pull-in voltage rating up to 3V, and a peak drain current rating up to 5A.

IXDN614PI is widely used for low-side switch applications and typically used for driving logic-level P-channel MOSFETs. It consists of an input stage synchronous rectifier circuit, a driver switch stage and a high-current output stage buffer. The input stage synchronous rectifier circuit provides improved efficiency and low gate charge. The driver switch stage has low power consumption and high switching speed, while the high-current output stage buffers provide improved reliability and system robustness. With its high-current capability and high voltage rating, IXDN614PI is ideal for driving medium to high power applications.

IXDN614PI also incorporates a variety of protection features such as over-voltage and under-voltage protection, over-temperature protection, and short-circuit protection. It also has a slew-rate limiting feature to prevent inrush current and improve system efficiency. In addition, it also has a wide operating temperature range from -40°C to +125°C.

The working principle of IXDN614PI is based on pulse width modulation (PWM) control. It takes an input pulse width modulation signal with an appropriate input voltage range and converts it into a corresponding output voltage. This output voltage is then used to drive the gate of the P-channel power MOSFET transistor. As the input signal varies, the gate voltage of the transistor also varies accordingly, thus allowing the transistor to conduct and off accordingly.

IXDN614PI is widely used in a variety of PMIC applications such as low-side switch, high-side switch, power supplies or other power management solutions. It is also widely used in automotive and industrial applications, in wireless power solutions, and in the industrial infrastructure.

The specific data is subject to PDF, and the above content is for reference

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