IXGK120N60C2 Allicdata Electronics

IXGK120N60C2 Discrete Semiconductor Products

Allicdata Part #:

IXGK120N60C2-ND

Manufacturer Part#:

IXGK120N60C2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 830W TO264
More Detail: IGBT PT 600V 75A 830W Through Hole TO-264 (IXGK)
DataSheet: IXGK120N60C2 datasheetIXGK120N60C2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 830W
Base Part Number: IXG*120N60
Supplier Device Package: TO-264 (IXGK)
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 80A, 1 Ohm, 15V
Td (on/off) @ 25°C: 40ns/120ns
Gate Charge: 370nC
Input Type: Standard
Switching Energy: 1.7mJ (on), 1mJ (off)
Series: HiPerFAST™, Lightspeed 2™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Current - Collector Pulsed (Icm): 500A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGK120N60C2 is a cooling-friendly IGBT module for application in medium-power motor drives, solar inverters, and UPS systems, integrating the latest in advanced power electron technology. It has a high voltage rating at 600V, a low conduction (on-state) loss of 5.2 mΩ and a threshold voltage of 2.5 Vgs.

Single-stage IGBTs are the most common type of power electronic components and are used in many different applications. The IXGK120N60C2 is a perfect choice for small to medium-range power applications, such as motor drives, solar inverters, and UPS systems. Its low conduction loss and high voltage rating make it a great choice for applications where power efficiency is of the utmost importance.

The IXGK120N60C2 is based on the Insulated-Gate Bipolar Transistor (IGBT) technology, which is known for high switching speeds and low conduction losses. The device has a high blocking voltage of 600V, a low threshold voltage of 2.5V, and a low on-state resistance of 5.2 mΩ. It also has an improved gate-charge/current ratio, resulting in improved switching performance. This makes the IXGK120N60C2 an excellent choice for high frequency applications.

The IXGK120N60C2 offers various current ratings, ranging from 400A to 2000A, depending on the specific application. The device also has a high avalanche capability and soft body diode emulation for system-level protection. The IXGK120N60C2 is also equipped with a variety of protection features, such as current limiting, over-temperature protection, and output short circuit protection.

The working principle of the IXGK120N60C2 is fairly simple. When the gate voltage is equal to or greater than the threshold voltage, the device switches on and current flows between the collector and emitter terminals. It then acts like a closed switch between the two terminals. When the gate voltage falls below the threshold voltage, the device switches off and current no longer flows between the collector and emitter terminals. This device is suitable for use in low-power applications and its high performance makes it an ideal choice for medium-power applications.

To summarize, the IXGK120N60C2 is a highly efficient and reliable Single-stage IGBT from IXYS Corporation. It has a high voltage rating at 600V and a low conduction loss of 5.2 mΩ. It is equipped with various protection features and a soft body diode emulation for system-level protection. It is a perfect choice for small to medium-power applications such as motor drives, solar inverters, and UPS systems. The device is based on the Insulated-Gate Bipolar Transistor technology and it has a fairly simple working principle.

The specific data is subject to PDF, and the above content is for reference

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