IXGK60N60B2D1 Discrete Semiconductor Products

Switching Energy:	1mJ (off)
Base Part Number:	IXG*60N60
Supplier Device Package:	TO-264 (IXGK)
Package / Case:	TO-264-3, TO-264AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	35ns
Test Condition:	400V, 50A, 3.3 Ohm, 15V
Td (on/off) @ 25°C:	28ns/160ns
Gate Charge:	170nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	500W
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 50A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IXGK60N60B2D1 is a single IGBT module designed to facilitate the efficient switching of electrical power up to 600V and 60A. It is a part of IXYSs extensive portfolio of insulated-gate bipolar transistor (IGBT) and Thyristor modules. This article provides an overview of the IXGK60N60B2D1s application field, as well as its underlying working principle.

Application field

The IXGK60N60B2D1 is suitable for a variety of industrial and consumer applications, such as solar and wind power inverters, motor drive systems, induction and resistance heating systems, welding systems, and adjustable speed drives. It is also used in automotive applications such as engine starters, hybrid buses, and alternators.The features of the IXGK60N60B2D1 make it an ideal choice for these applications. Its high-voltage and high-current capability up to 600V and 60A, respectively, allow for increased power density and high efficiency. Its low switching and conduction losses also contribute to its overall efficiency and power capabilities. Furthermore, its integrated E/O Driver allows for easy and safe operation, while its advanced thermal design ensures reliable and efficient operation.

Working Principle

An IGBT is a type of power semiconductor device that combines the benefits of both the MOSFET and a BJT. It combines the high input impedance and low drive current of the MOSFET with the high switching speed and low saturation voltage of the BJT.The IXGK60N60B2D1 is specifically a single IGBT module, meaning that it contains one IGBT in a single package. It operates on a principle known as inverse polarization, which means that the gate, collector, and emitter terminals all have the same polarity. This type of IGBT is known as an enhancement mode IGBT and operates similarly to a MOSFET.When the gate control voltage applied to the gate terminal of the IGBT is positive, the device is turned on. This allows the current to flow freely between the gate and emitter terminals and constructively amplifies the current flowing between the collector and emitter terminals, resulting in a high gain.When the gate control voltage is decreased to a certain negative threshold against the emitter and collector, the IGBT is turned off. This results in the device entering an off state and no current is able to flow between the collector and emitter terminals.

Conclusion

In conclusion, the IXGK60N60B2D1 is a single IGBT module designed to facilitate the efficient switching of electrical power up to 600V and 60A. It is ideally suited for applications such as solar and wind power inverters, motor drive systems, induction and resistance heating systems, welding systems, and adjustable speed drives. The working principle of an IGBT module involves the use of an inverse polarization principle, where the gate, collector, and emitter terminals have the same polarity. This effectively allows for the device to be switched on and off using a gate control voltage, resulting in high efficiency and power capabilities.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description