
IXGK28N140B3H1 Discrete Semiconductor Products |
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Allicdata Part #: | IXGK28N140B3H1-ND |
Manufacturer Part#: |
IXGK28N140B3H1 |
Price: | $ 4.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1400V 60A 300W TO264 |
More Detail: | IGBT PT 1400V 60A 300W Through Hole TO-264 (IXGK) |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.32000 |
10 +: | $ 4.19040 |
100 +: | $ 4.10400 |
1000 +: | $ 4.01760 |
10000 +: | $ 3.88800 |
Power - Max: | 300W |
Supplier Device Package: | TO-264 (IXGK) |
Package / Case: | TO-264-3, TO-264AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 350ns |
Test Condition: | 960V, 28A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 16ns/190ns |
Gate Charge: | 88nC |
Input Type: | Standard |
Switching Energy: | 3.6mJ (on), 3.9mJ (off) |
Series: | GenX3™ |
Vce(on) (Max) @ Vge, Ic: | 3.6V @ 15V, 28A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 1400V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Last Time Buy |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXGK28N140B3H1 is an innovative Integrated Gate Commutated Thyristor or IGBT which is designed especially for medium voltage applications that require fast dynamics and a high overload capability.
These applications typically include transportation, power generation and industrial motor-drive solutions. The IXGK28N140B3H1 is a single IGBT device having a high-voltage rating of 2800V and a maximum collector current of 1400A.
An IGBT is a type of transistor which is suited for high-frequency and high power applications. It combines the characteristics of MOSFETs and Bipolar Junction Transistors (BJTs), allowing for higher power efficiency and lower power losses. With this device, high currents can be switched on and off quickly without requiring a large amount of current.
One of the most significant features of the IXGK28N140B3H1 is its low switching losses. This is achieved through its improved gate-charge design, which allows the IGBT to switch on rapidly with minimal power loss. Its low gate-charge also minimises the drive requirements and reduces power losses.
The IXGK28N140B3H1 can be used in both medium voltage and low voltage applications. In medium voltage applications, it can be used for motor drives and power converters, whereas in low voltage applications, it can be used for lighting, motor control and power supplies.
The working principle of the IXGK28N140B3H1 involves two states: on and off. When the voltage is applied to the gate terminal of the IGBT, it becomes conducting and allows current to pass from the collector to the emitter. When the voltage is removed, the IGBT switches off and the current is blocked, preventing further current from flowing.
This device also has a number of other features which make it a great choice for medium voltage applications. It has a high current rating of 1400A, a high voltage rating of 2800 volts, and also offers a high degree of noise immunity. In addition, its low switching losses make it ideal for applications which require fast switching and high overload capability.
Overall, the IXGK28N140B3H1 is a great choice for medium voltage applications which require fast dynamics and a high overload capability. Its low switching losses enable it to switch on quickly, and its high current rating makes it ideal for a variety of industrial applications. It also offers a high level of noise immunity, making it suitable for applications which involve sensitive electronics.
The specific data is subject to PDF, and the above content is for reference
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IXGK28N140B3H1 | IXYS | -- | 1000 | IGBT 1400V 60A 300W TO264... |
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