IXGK50N60C2D1 Allicdata Electronics

IXGK50N60C2D1 Discrete Semiconductor Products

Allicdata Part #:

IXGK50N60C2D1-ND

Manufacturer Part#:

IXGK50N60C2D1

Price: $ 6.64
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 480W TO264AA
More Detail: IGBT PT 600V 75A 480W Through Hole TO-264 (IXGK)
DataSheet: IXGK50N60C2D1 datasheetIXGK50N60C2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
25 +: $ 6.03464
Stock 1000Can Ship Immediately
$ 6.64
Specifications
Switching Energy: 380µJ (off)
Base Part Number: IXG*50N60
Supplier Device Package: TO-264 (IXGK)
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 35ns
Test Condition: 480V, 40A, 2 Ohm, 15V
Td (on/off) @ 25°C: 18ns/115ns
Gate Charge: 138nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGK50N60C2D1 is a high performance Insulated Gate Bipolar Transistor (IGBT) of the single type. It is used as a switch in a variety of applications. The device has a maximum specific on-resistance of 7.62 mΩ, a nominal current rating of 50A and a collector-emitter blocking voltage of 600V.

An IGBT integrates the functions of both a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). This combination of device types makes the IGBT highly efficient. This is because when the transistor is turned on, the MOSFET is used as the current switch, producing a low on-state voltage drop. Then, when the transistor is turned off, the BJT is used as the current switch, producing a low power loss.

The IXGK50N60C2D1 IGBT is designed for use in a variety of power switching applications, including DC/DC converters, AC/DC converters, telecom inverters, battery chargers, UPS (uninterruptible power supplies), motor drives, switching power supplies, and boost converters.

In a typical application, the IXGK50N60C2D1 will be connected to a power supply on one side and to a load on the other side. When inputted with a pulse signal, it will switch the load in and out of the circuit, thereby controlling the amount of power that reaches the load. This pulse signal can be generated from an external control circuit or from a microprocessor.

The IXGK50N60C2D1 has an insulated gate, which reduces gate electron injection from within the device. This makes it more reliable and increases its lifetime. The device also has a surge current capability of up to 600A and a high switching speed, making it suitable for a variety of high power applications.

The IXGK50N60C2D1 is an excellent choice for power switching applications due to its low on-state resistance, its ability to withstand surge currents, and its high switching speed. Its combination of MOSFET and BJT components allows it to efficiently switch current, making it an ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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