IXGK82N120B3 Allicdata Electronics

IXGK82N120B3 Discrete Semiconductor Products

Allicdata Part #:

IXGK82N120B3-ND

Manufacturer Part#:

IXGK82N120B3

Price: $ 12.59
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 230A 1250W TO264
More Detail: IGBT PT 1200V 230A 1250W Through Hole TO-264 (IXGK...
DataSheet: IXGK82N120B3 datasheetIXGK82N120B3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
25 +: $ 11.44790
Stock 1000Can Ship Immediately
$ 12.59
Specifications
Power - Max: 1250W
Supplier Device Package: TO-264 (IXGK)
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 600V, 80A, 2 Ohm, 15V
Td (on/off) @ 25°C: 30ns/210ns
Gate Charge: 350nC
Input Type: Standard
Switching Energy: 5mJ (on), 3.3mJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Current - Collector Pulsed (Icm): 500A
Current - Collector (Ic) (Max): 230A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs (Insulated Gate Bipolar Transistors) are widely used in power management applications due to their high power handling capabilities and efficiency. The IXGK82N120B3 is a high wattage IGBT module designed for use in applications requiring up to 800A for the power conversion of AC or DC. This module is used in a variety of applications, from automotive powertrain systems, to traction and automation applications, to wind power generation.

The IXGK82N120B3 is a single IGBT module, which means that one IGBT is mounted on the module along with its associated gate drive, protection, and control circuitry. This module is capable of controlling very large currents and voltages, making it ideal for applications such as motor controls, solar energy systems, and UPS systems.

The working principle of the IXGK82N120B3 follows the same basic principle as all IGBTs, which is the use of a bipolar junction transistor to control the power switching action of the gate. When a gate drive signal is applied to the device, the IGBT gate turns on and current flow is enabled between the collector and emitter of the transistor. This current is managed by a gate drive circuit, which is a combination of a gating switch, an output stage, and a gate resistor network. This gate drive circuit controls the voltage across the gate of the IGBT in order to regulate the power switching action and manage the current flow.

The IXGK82N120B3 module is made up of several components, including the IGBT itself, the gate drive circuit, the protection circuit, and the control circuitry. The protection circuit is designed to protect the IGBT from over current, over voltage, and excessive temperature. The control circuitry is designed to provide the user with the ability to adjust the gate drive as needed, in order to optimize and manage the current flow. The module is designed to provide good thermal management, to ensure that the IGBT is not damaged by excessive heat.

The IXGK82N120B3 module is used in a variety of applications, such as inverters, motor drives, and solar energy systems. It is an ideal choice for applications requiring high wattage and large currents. The module is a reliable and efficient power conversion device, making it a widely used choice in many different industries.

The specific data is subject to PDF, and the above content is for reference

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