IXGK55N120A3H1 Discrete Semiconductor Products

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IXGK55N120A3H1 application field and working principle

IXGK55N120A3H1 is a single IGBT with a maximum collector emitter voltage of 1200V, a collector emitter saturated voltage of 4.0V and a maximum drain current of 520A. It is a popular device due to its low voltage drop and low cost compared to other power MOSFETs. Each IGBT is composed of a p-type base material, n-type collector and an n-type emitter. All three components must communicate with each other for the device to operate properly.

Application field

The IXGK55N120A3H1 is widely used in various applications due to its high performance in a wide voltage range. It is often used in the field of renewable energy, industrial automation, electrical vehicle Charging, DC/AC dynamic inverters, and consumer electronics. As it is a single IGBT device, it provides low conduction losses, fast switching and easy paralleling, which makes it even more helpful in the field of automation, invertors and other industries.

Working principle

The working principle of an IXGK55N120A3H1 IGBT is similar to that of a power MOSFET. It consists of a base p-type material, an n-type collector and an n-type emitter. When the voltage across the base and the collector is below the threshold voltage, the device is off and no current is allowed to flow between the collector and the emitter. However, when the voltage between the base and the collector is greater or equal to the threshold voltage, the device starts conducting current through the collector and the emitter. The current flow between the collector and the emitter increases with the increase in the voltage between the collector and the emitter. Once the voltage across the base and collector drops below the threshold voltage, the IGBT turns off and no current flows anymore across the collector and emitter.

Advantages of IXGK55N120A3H1

The IXGK55N120A3H1 is a popular device due to its various advantages. Some of the advantages include:

• High Voltage and High Current Operation - The IXGK55N120A3H1 can support a voltage up to 1200V, and a current up to 520A.
• Low Conduction and Low Switching Losses - The IXGK55N120A3H1 provides low conduction losses, and low switching losses.
• High efficiency - The IXGK55N120A3H1 is a low-cost, high-efficiency device due to its low voltage drop.
• Easy to Parallel - It is easy to connect multiple IXGK55N120A3H1s in parallel to achieve higher current output.
• Adaptable - The IXGK55N120A3H1 can be used in many applications due to its wide voltage range and high performance.

Conclusion

In conclusion, the IXGK55N120A3H1 is a single IGBT device with many advantages such as its high voltage, high current operation, low conduction and switching losses, high efficiency, and its easy to parallel. It has many applications in the field of renewable energy, industrial automation, electrical vehicle charging, DC/AC dynamic inverters, and consumer electronics. Its low cost and high performance make it a popular device in many industries.

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