IXGK82N120A3 Discrete Semiconductor Products

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Introduction

The IXGK82N120A3 transistor is an insulated-gate bipolar transistor (IGBT) module with single configuration. It has multiple features, a commonly used one being its ability to simultaneously handle both high current and high voltage. With this capability, it is widely used in electric converters, and can help to perform a number of tasks, from regulating frequencies and power to providing active bypassing protection.

Application Field

The IXGK82N120A3 transistor is mostly used in high-power applications that demand current and voltage control over a wide range of frequencies and voltages. It is exceptionally effective in converting power, with its maximum output current rated at 830A and operating voltage up to 1850V. On top of that, it has a wide voltage range, allowing for compatibility with other types of signal processing systems.

This transistor can be used in a variety of applications, from renewable energy systems and power supplies to motor drive and traction control. It can also be used in electrical systems for automotive, industrial, and heavy-duty applications, offering long-term durability, reliability, and cost-effectiveness.

The IXGK82N120A3 transistor is also used in audio/visual equipment, LED lighting systems, as well as avionics and home appliances, generally requiring a wide-range of power conversion operations.

Working Principle

Most IGBT transistors have a structure made up of two distinct layers. The lower layer is typically an N drisfrective-type transistor, while the top layer consists of an insulated gate field effect transistor. When the gate voltage is applied to the device, electrons are injected into the lower N layer, activating conduction between the source and drain terminals. This mechanism is responsible for the switching action of the transistor.

In the case of the IXGK82N120A3 transistor, it has an N-type MOSFET section, containing two input circuits and two output circuits. The MOSFET section is connected with the gate, allowing for a voltage-controlled voltage gain in the circuit.

Unlike a traditional transistor, the IXGK82N120A3 does not require a separate base contact for the gate in order to operate. The insulated gate prevents electrons from flowing from the gate to the drain, allowing for a higher current between the two terminals. This increases the efficiency of the device.

The IXGK82N120A3 transistor offers low on-state voltage drop along with fast switching time, making it ideal for fast switching applications. The module is also designed with a wide service temperature range, with an operating junction temperature of up to 175°C.

Conclusion

The IXGK82N120A3 transistor is an insulated-gate bipolar transistor (IGBT) module with single configuration. It is commonly used to handle large current and voltage, and is excellent at converting power. It is mostly used in high-power applications demanding control over wide range of frequencies and voltages, from renewable energy systems and power supplies to motor drive and traction control, as well as audio/visual equipment, LED lighting systems, and avionics and home appliances. This module works on the basis of its two distinct layers, one being an N-type MOSFET section, connected with the gate for voltage-controlled voltage gain. It offers low on-state voltage drop along with a wide service temperature range, making it an ideal choice for fast switching applications.

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