IXGK35N120B Discrete Semiconductor Products

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IGBT transistors are essential components in the field of power electronics and can be found in applications in industrial, commercial and residential settings. IXGK35N120B is one such type of IGBT that has the potential to cause a revolution in the design of power electronics. This article will discuss the application field and working principle for IXGK35N120B.

IXGK35N120B is a high performance IGBT device that is manufactured for switching applications of high power density and high frequency. This device is capable of operating at extremely high frequencies which allows for the design of electronics with higher performance, higher power efficiency and longer life. IXGK35N120B has a low on-state output capacitance and a low off-state leakage current. It also offers a very low switching losses due to its high switching speed and soft turnoff feature.

Applications for IXGK35N120B include motor control, electronic ballast, AC/DC power supplies, PWM controllers and UPS systems. The device is suitable for industrial applications because of its low power dissipation and high reliability. Its low gate charge also enables it to be used in high frequency applications such as converter topologies. The IGBT is also suitable for home appliances, lighting systems and display power supplies due to its low cost, high reliability and low power dissipation.

The working principle of IXGK35N120B is similar to that of the standard IGBT devices. It consists of an insulated gate field effect transistor that is connected to the collector-drain leads of the power transistor. When the gate voltage is greater than the threshold voltage, a current begins to flow from the gate terminal to the collector-drain. As the voltage rises, the collector current increases, creating a higher collector-drain voltage. When the voltage increases to a certain level, the collector-drain voltage starts to turn off the IGBT. At this point, the current flowing through the collector-drain will start to decrease. This working principle is the same for all IGBTs.

IXGK35N120B is a high frequency IGBT which has the potential to revolutionize the design of power electronics. It has a low on-state output capacitance and a low off-state leakage current. It is suitable for applications such as motor control, electronic ballast, AC/DC power supplies, PWM controllers, UPS systems and high frequency converter topologies. The working principle of this IGBT is the same for all IGBTs and consists of an insulated gate field effect transistor connected to the collector-drain of the power transistor. With its high performance, low power dissipation and high reliability, IXGK35N120B is sure to become an essential component in power electronics in the future.

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