IXGK400N30C3 Allicdata Electronics
Allicdata Part #:

IXGK400N30C3-ND

Manufacturer Part#:

IXGK400N30C3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 300V 400A TO264AA
More Detail: IGBT 300V 400A Through Hole TO-264 (IXGK)
DataSheet: IXGK400N30C3 datasheetIXGK400N30C3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: --
Base Part Number: IXG*400N30
Supplier Device Package: TO-264 (IXGK)
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: --
Test Condition: --
Td (on/off) @ 25°C: --
Input Type: Standard
Series: --
Vce(on) (Max) @ Vge, Ic: --
Current - Collector (Ic) (Max): 400A
Voltage - Collector Emitter Breakdown (Max): 300V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs (Insulated Gate Bipolar Transistors) are a type of transistor capable of switching large-voltage and high-current loads while still being able to be easily turned OFF and ON. IXGK400N30C3 is an IGBT chip specifically designed for low saturation voltage and usage in switch-mode power supplies. IXGK400N30C3 is usually applied in the fields of motor control, converter systems, and industry process control.

In the IGBT chip, the gate is isolated from the other two terminals (the drain and the source) by a thin layer of crystal material. When a potential is applied across the gate and the source terminal, charge carriers will accumulate in the channel of the IGBT chip between the source and the drain, forming an effective linear channel of conduction. When this channel is established, the current would flow through the gate-source intersection and then through the drain. This is equivalent to the operation of a standard transistor, with the gate voltage acting to control the current flow through the drain.

However, when the gate voltage is increased beyond a certain threshold, the charge carriers begin to form a thicker channel of conduction, leading to a higher on-state current. This thicker channel helps to reduce the "turn-off" voltage of the IGBT chip, allowing for a much faster switching speed and higher power efficiency. Consequently, IXGK400N30C3 is designed to have a particularly low on-state voltage and a relatively low gate voltage needed to switch off the current, allowing it to be used in switch-mode power supplies.

On the other hand, a unique feature of IXGK400N30C3 is its reverse-voltage capability, which allows the transistor to act as a thyristor in addition to functioning as a normal transistor. By applying a reverse voltage, the IGBT chip can be used to provide a path for current even when the output source is shorted.

In addition, IXGK400N30C3 is designed for highly efficient operation, offering an increased power density capability that is especially suited for high-current applications. This allows IXGK400N30C3 to be used in a wide range of motor control and switching applications, from board-level motor control devices to high-performance server applications.

Overall, IXGK400N30C3 is a highly efficient IGBT chip designed for use in applications such as motor control, converters, and industry process control devices. In addition, it is also capable of functioning as a thyristor, allowing it to be used for reverse voltage applications. Thus, IXGK400N30C3 is a versatile and reliable IGBT chip highly adept in many industrial processes.

The specific data is subject to PDF, and the above content is for reference

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