IXGK64N60B3D1 Allicdata Electronics
Allicdata Part #:

IXGK64N60B3D1-ND

Manufacturer Part#:

IXGK64N60B3D1

Price: $ 7.01
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 460W TO264
More Detail: IGBT PT 600V 460W Through Hole TO-264 (IXGK)
DataSheet: IXGK64N60B3D1 datasheetIXGK64N60B3D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
25 +: $ 6.37358
Stock 1000Can Ship Immediately
$ 7.01
Specifications
Switching Energy: 1.5mJ (on), 1mJ (off)
Supplier Device Package: TO-264 (IXGK)
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 35ns
Test Condition: 480V, 50A, 3 Ohm, 15V
Td (on/off) @ 25°C: 25ns/138ns
Gate Charge: 168nC
Input Type: Standard
Series: GenX3™
Power - Max: 460W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Current - Collector Pulsed (Icm): 400A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Integrated gate-commutated thyristor (IGCT) is a branch of IGBT, which is developed from the IGBT and also known as high voltage gate turn-off thyristor (GTO). The IXGK64N60B3D1 is a typical series of single gate IGBTs, designed for power control applications. It provides high-performance IGBTs in a single package, with rated currents up to 800A and an operating voltage of 6500V.

The IXGK64N60B3D1 is suitable for use in many industrial and consumer applications, such as electric motor controllers, industrial drives, and rectifiers in industrial inverter systems. It can also be used in lighting, home appliances, and heating and air conditioning systems.

The working principle of IXGK64N60B3D1 is based on the principle of voltage and current control in semiconductor devices. The semiconductor material of IXGK64N60B3D1 is boron-doped silicon carbide, which has high breakdown voltage, high thermal conductivity and low on-state loss. When a positive gate voltage is applied to the IGBT gate terminal, the voltage allows the electrons injected by the N-type silicon carbide material to form the P-type collector region, which forms a low-resistance current path between the emitter and collectors. This enables current to flow between the emitter and collectors, thus providing a low-resistance path for controlling a load.

When the gate voltage is removed, the collector-emitter voltage is blocked and the electron-injected region is lost, resulting in higher on-state losses. However, the IXGK64N60B3D1 has a number of features that improve its switching performance. Firstly, the IXGK64N60B3D1 has a fast turn-on and turnover time, which means it can rapidly turn on and turn off the voltage between the collector and emitter. Secondly, the IXGK64N60B3D1 has a low on-state losses, which ensures that the device is highly efficient when turned on. Lastly, the IXGK64N60B3D1 has excellent thermal characteristics, allowing it to dissipate heat quickly, thus preventing damage to the device.

The IXGK64N60B3D1 is designed for use in a variety of applications requiring high voltage and current control. In motor control applications, it can be used to control a motor’s speed, acceleration, and power. In rectifier applications, it can be used to rectify AC signals. In inverter applications, it can be used to control the power in an AC power supply, and in lighting applications, it can be used to control the brightness of a light.

In summary, the IXGK64N60B3D1 is a high performance single IGBT suitable for power control applications, such as motor controls, rectifiers, inverters and lighting. It offers fast turn-on and turnover time, low on-state losses, and excellent thermal characteristics, making it an ideal choice for various power control applications.

The specific data is subject to PDF, and the above content is for reference

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