IXGK60N60 Allicdata Electronics

IXGK60N60 Discrete Semiconductor Products

Allicdata Part #:

IXGK60N60-ND

Manufacturer Part#:

IXGK60N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 300W TO264
More Detail: IGBT PT 600V 75A 300W Through Hole TO-264 (IXGK)
DataSheet: IXGK60N60 datasheetIXGK60N60 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 300W
Base Part Number: IXG*60N60
Supplier Device Package: TO-264 (IXGK)
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 60A, 2.7 Ohm, 15V
Td (on/off) @ 25°C: 50ns/300ns
Gate Charge: 130nC
Input Type: Standard
Switching Energy: 8mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction

IXGK60N60 is a power transistor specifically dedicated to applications that require high voltage switch and high current drive. It is an insulated gate bipolar transistor (IGBT), which is part of a family of Transistors – IGBTs – Single.

Application Fields

IXGK60N60 is capable of handling voltages up to 600V, which is applicable to various applications including power supplies, AC/DC converters, renewable energy systems, motor control systems, and UPS systems. It is suitable for motor control management, general switching, solar power conversion, three-phase motor drives, electric vehicle charging, and clocked switch management systems.

Structure and Working Principle

The IXGK60N60 is built on an N-channel insulated gate bipolar transistor (IGBT) substrate with an aluminum nitride (ALN) layer over it. The IGBT is formed by a P type base and a power N-channel structure on top of it that holds a gate oxide layer at the bottom with a floating gate electrode above it. It also contains a buried layer of doped emitter that is connected directly to a source terminal. The two junction terminals, collector and emitter, meet at the N-channel structure.The working principle of the IXGK60N60 is simple: when a positive voltage is applied to the gate terminal, it creates a strong electric field that controls the current flow through the transistor. This allows the transistor to turn on and off electrically—switching power between the collector and emitter terminals. When the IGBT is switched off, the voltage between the collector and emitter terminals is blocked, and when the IGBT is switched on, current passes through the transistor. This control of current flow is what makes IGBTs so useful in power control applications.

Advantages and Disadvantages

The IXGK60N60 offers a number of advantages compared to other types of power transistors, including greater current handling capabilities, higher switching speeds, and better thermal performance. It also offers high saturation voltage, an enhancement factor that makes it easier to control the flow of current, and a low threshold voltage, which reduces the power loss when switching.

The main disadvantage of the IXGK60N60 is its relatively high cost. It is also more complicated to design with than other types of power transistors. In addition, the IGBT is more difficult to drive than the other types of power transistors.

Conclusion

The IXGK60N60 is a powerful tool for controlling and switching power in various applications. It has advantages over other types of power transistors, including higher current handling capabilities, faster switching speeds, and better thermal performance. However, the high cost and complexity of the IXGK60N60 may be a limiting factor for some applications.

The specific data is subject to PDF, and the above content is for reference

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