IXGK35N120CD1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXGK35N120CD1 is a single IGBT module produced by Ixys Corporation. It is intended for high frequency applications and offers a range of features including an integrated gate-emitter protection diode, gate-emitter voltage clamp, high temperature capability and high gate charge.

The IXGK35N120CD1 is designed for use as an IGBT switch in power converter or motor drive applications. It has a rated collector current (Ic) of 35 Amps (continuous) and a rated collector-emitter voltage (VCE(sat)) of 1200 Volts. In addition, it has a maximum rated junction temperature of 175°C and a typical switching speed of 25 ns.

The working principle of an IGBT is based on the possible combination of two power components: the Bipolar Junction Transistor and the Insulated Gate Field Effect Transistor (MOSFET). The combining of these two components permits an enhancement mode of power control at higher device-level blocking voltage capabilities. Unlike most other transistor types, the IGBT can be directly operated from an on-board DC bus, eliminating the need for an external bias circuit.

The IXGK35N120CD1 is traditionally used to power circuits requiring dynamic control of motor speed, light dimming, and high frequency isolation. With its high voltage and temperature capabilities, this product is ideal for high power and high frequency applications, such as active front-end for solar energy inverters, motor control, UPS and adjustable speed drives.

This product also provides an integrated gate-emitter protection diode, along with an on-chip gate-emitter voltage clamp circuit designed to mitigate high dV/dt transients in the driver\'s turn-on/turnoff transition. This internal diode/clamp feature allows the device to be rapidly switched on and off at a high frequency, improving efficiency and system response.

In summary, the IXGK35N120CD1 is an IGBT module by Ixys Corporation that is ideal for high power and high frequency applications, such as active front-end for solar energy inverters, motor control, UPS and adjustable speed drives. It has a rated collector current of 35 Amps (continuous) and a rated collector-emitter voltage of 1200 Volts, and offers an integrated gate-emitter protection diode and a gate-emitter voltage clamp circuit designed to mitigate high dV/dt transients in the driver\'s transition.

The specific data is subject to PDF, and the above content is for reference