IXGR72N60A3H1 Allicdata Electronics
Allicdata Part #:

IXGR72N60A3H1-ND

Manufacturer Part#:

IXGR72N60A3H1

Price: $ 8.32
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 200W ISOPLUS247
More Detail: IGBT PT 600V 75A 200W Through Hole ISOPLUS247™
DataSheet: IXGR72N60A3H1 datasheetIXGR72N60A3H1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 7.56294
Stock 1000Can Ship Immediately
$ 8.32
Specifications
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Base Part Number: IXG*72N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 140ns
Test Condition: 480V, 50A, 3 Ohm, 15V
Td (on/off) @ 25°C: 31ns/320ns
Gate Charge: 230nC
Input Type: Standard
Series: GenX3™
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 60A
Current - Collector Pulsed (Icm): 400A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGR72N60A3H1 is an Insulated Gate Bipolar Transistor (IGBT) designed to efficiently control current and voltage. This type of transistor is used in many applications due to its numerous beneficial properties. IXGR72N60A3H1 belongs to a subset of IGBTs called “Single”. Single IGBTsare used in motor drives and welding machines, making them one of the most versatile types of transistors available.

The IXGR72N60A3H1 is equipped for many different applications. It was developed for the use of switching power supplies and inverters, making it suitable for most industrial applications. The IXGR72N60A3H1’s controllable gate voltage permits more precise control over current, enabling it to be used in more demanding and sophisticated applications. This includes factory automation systems, HVAC systems, welding machines and other demanding systems.

In addition, the IXGR72N60A3H1 is equipped with a high switching frequency that grows in relation to its increase in collector current capabilities. Its speed enables it to be used in high frequency switching applications that require switching speeds beyond 100 MHz. This makes it suitable for the operation of power electronics, especially in high power applications.

The IXGR72N60A3H1’s insulated gate structure allows it to be used in a wide range of temperatures, making it ideal for extreme or hazardous environments such as in mining, drilling, and other outdoor activities. Furthermore, the IXGR72N60A3H1’s insulated gate structure allows it to be used in many different types of circuits, enabling it to be used in a variety of settings.

The IXGR72N60A3H1 IGBTs’s working principle is based upon the fact that a voltage applied between the collector and emitter will cause current flow. The current flow is controlled by a gate voltage, which is used to regulate the transistor’s current. The transistor is “on” when the gate voltage is higher than a certain voltage and is “off” when the gate voltage is lower than the same voltage. This enables the IXGR72N60A3H1 IGBTs to control the current flow between its collector and emitter terminals.

Finally, the IXGR72N60A3H1 provides outstanding safety features such as EMI, latch up, and surge protection. These features ensure that the device performs consistently and reliably in its intended application.

The specific data is subject to PDF, and the above content is for reference

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