IXGR48N60B3D1 Allicdata Electronics
Allicdata Part #:

IXGR48N60B3D1-ND

Manufacturer Part#:

IXGR48N60B3D1

Price: $ 4.10
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 60A 150W ISOPLUS247
More Detail: IGBT PT 600V 60A 150W Through Hole ISOPLUS247™
DataSheet: IXGR48N60B3D1 datasheetIXGR48N60B3D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 3.72918
Stock 1000Can Ship Immediately
$ 4.1
Specifications
Switching Energy: 840µJ (on), 660µJ (off)
Base Part Number: IXG*48N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 100ns
Test Condition: 480V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 22ns/130ns
Gate Charge: 115nC
Input Type: Standard
Series: GenX3™
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Current - Collector Pulsed (Icm): 280A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGR48N60B3D1 Application Field and Working Principle

The IXGR48N60B3D1 is an insulated gate bipolar transistor (IGBT) ideal for applications in motor control, lighting control, power conversion, UPS systems, and uninterruptable power supplies (UPS). It is a single-in-line IGBT with a nominal current rating of 60A, a voltage rating of 600V, and an enhanced peak current rating of 50A. It has a Y-type topology, with a DC link connected between the collector and emitter and a Gate connected to the base.

The IXGR48N60B3D1 IGBT is a multi-junction device that has two main sections, an n-type and a p-type. The n-type section has a base layer connected to the Gate electrode and a collector layer connected to the Drain/Collector electrode. The p-type section has an emitter layer connected to the Source/Collector electrode and a top layer connected to the Gate electrode. When a voltage is applied to the Gate, the electrons are injected into the base, which then turns on the IGBT. This causes a current to flow across the two sections, allowing energy to be transferred from the Collector to the Emitter.

When the IGBT is turned off, the electrons are not able to transfer any energy and the IGBT can no longer conduct current. This prevents the IGBT from being damaged due to over-heating or arcing. The IXGR48N60B3D1 IGBT is a bidirectional device, meaning that it can be used for either AC or DC voltage applications. It also has temperature and current overload protection, making it an ideal choice for high-power applications.

The IXGR48N60B3D1 IGBT is a high-power switch that has numerous applications in industrial and commercial electronics. It is often used for motor control, lighting control, power conversion, UPS systems, uninterruptable power supplies, and power factor corrections.

The IXGR48N60B3D1 IGBT has a low voltage drop between the Collector and Emitter, allowing it to be used in a variety of high-current applications. Its robust and reliable design makes it well suited for long-term use, while its low noise operation makes it ideal for low-noise applications. In addition, its temperature and current overload protection make it a reliable choice for high-power applications.

In conclusion, the IXGR48N60B3D1 IGBT is an ideal choice for applications that require a bidirectional switch capable of dissipating large amounts of power. It has numerous applications in motor control, lighting control, power conversion, UPS systems, uninterruptable power supplies, and power factor corrections. Its low voltage drop and overload protection make it a reliable and safe choice for a variety of high-power applications.

The specific data is subject to PDF, and the above content is for reference

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