Allicdata Part #: | 1086-20895-ND |
Manufacturer Part#: |
JAN2N3637UB |
Price: | $ 13.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 175V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface... |
DataSheet: | JAN2N3637UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 12.07020 |
Series: | Military, MIL-PRF-19500/357 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 175V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-SMD |
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The JAN2N3637UB transistor is classified as a single-bipolar (BJT) transistor, which are transistors that use both electrons and holes as charge carriers. This type of transistor builds on the fundamental components of a regular transistor—the base, emitter, and collector—to provide superior electrical performance.
The JAN2N3637UB transistor is designed primarily for high-frequency switching applications such as radio receivers and transmitters, power amplifiers, inverters, and mobile devices. It offers superior performance as compared to other transistors of the same type.
The JAN2N3637UB transistor works by controlling the amount of current passing through it by controlling the voltage applied to its base (emitter) terminal. A small voltage applied to the base creates a larger current that passes between the collector and emitter. This varies the amount of current and hence the voltage, allowing it to be used as a switch.
The JAN2N3637UB transistor is also a good choice for analog applications such as modulators, transducers, and analog-to-digital converters. With low power dissipation, it is able to switch signals without introducing noise or distortion. It is also robust and reliable, as it is built on a robust semiconductor substrate.
The JAN2N3637UB transistor is similar to other bipolar transistors in that it is a voltage-controlled device, but it has some advantages over other types of transistors. It has a low-voltage drop, meaning it is able to operate at higher currents without drawing too much power. It also has a high transition frequency, allowing for higher switching speeds. Finally, it has a low noise figure, making it an excellent choice for high-performance applications.
The JAN2N3637UB transistor is an ideal choice for high-performance applications such as radio receivers and transmitters, power amplifiers, inverters, and mobile devices. With superior performance, a low-voltage drop, and a high transition frequency, it is a great choice for those looking for reliability, performance, and efficiency.
The specific data is subject to PDF, and the above content is for reference
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