Allicdata Part #: | 1086-20887-ND |
Manufacturer Part#: |
JAN2N3636UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 175V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface... |
DataSheet: | JAN2N3636UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/357 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 175V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 50mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-SMD |
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A JAN2N3636UB is a general-purpose Bipolar Junction Transistor, or BJT, used in various voltage and functional configurations. This single type of BJT is capable of handling current levels up to 0.1 amp, and is rated for up to 175V.
The JAN2N3636UB is primarily used in digital circuits, logic circuits, and linear amplifier circuits. Due to its combination of low current and high voltage ratings, it is well-suited to a range of low-powered applications such as radio transmission, monitoring, and digital processing. It can also be used as a switching device in applications requiring short pulse widths.
The JAN2N3636UB has an n-type base/collector region that is about 1/4 the size of its p-type emitter region. This results in a higher gain, or hFE, that is often between 120 and 330. This high gain can be used to amplify a small current from a signal source, such as an electric guitar pickup. However, it is not suitable for switch mode applications, as it has a relatively high collector-emitter saturation voltage, or Vce(SAT).
The JAN2N3636UB is able to operate between -65 to +175 degrees Celsius. This wide temperature range makes it viable for use in industrial applications, such as electric motors and other high-intensity electronic products. Furthermore, its To-92 compatible plastic package allows it to be easily mounted onto a circuit board with minimal effort.
The JAN2N3636UB has two pins to which its collector (C) and emitter (E) connections are made. Its base connection is made to the circuit itself. Due to the high gain provided by its design, any small current that is injected into the base will be amplified and come out of the collector at a much higher voltage. This is the basis for the common-emitter circuit configuration, which is used for general purpose amplifiers.
In addition to the common-emitter configuration, the JAN2N3636UB is also well-suited for common-collector and common-base configurations. All of these configurations operate according to the same basic principles, but have slightly different performance characteristics.
The JAN2N3636UB is an ideal choice for a wide range of low power applications, as it offers both high voltage and low current ratings. Its combination of high gain and wide temperature range also makes it suitable for a range of industrial applications.
The specific data is subject to PDF, and the above content is for reference
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