JAN2N2905 Allicdata Electronics
Allicdata Part #:

1086-20752-ND

Manufacturer Part#:

JAN2N2905

Price: $ 19.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 40V 0.6A TO39
More Detail: Bipolar (BJT) Transistor PNP 40V 600mA 800mW Thro...
DataSheet: JAN2N2905 datasheetJAN2N2905 Datasheet/PDF
Quantity: 1000
100 +: $ 17.62850
Stock 1000Can Ship Immediately
$ 19.39
Specifications
Series: Military, MIL-PRF-19500/290
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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Single bipolar transistors, such as the JAN2N2905, are often used as amplifiers, switches, level detectors and signal controllers. These transistors are usually composed of three terminals, namely the base (B), emitter (E) and collector (C). When the JAN2N2905 is used in an application circuit, the base is typically supplied with a small current which is known as the biasing current. This biasing current is used to control the conductivity of the bipolar transistor, which determines the flow of current between the collector and the emitter.

It is worth noting that the characteristics of the JAN2N2905 transistor are determined by its working principle. The most important principle of bipolar transistors is the recombination-diffusion process. When the transistor is turned on, electric charge carriers injected from the emitter flow to the base and the collector regions. At the same time, electric charge carriers present in the base region start diffusing across the base region. As a result, the current starts flowing between the emitter and the collector and therefore the voltage across the collector and emitter terminals also starts increasing.

In addition, it is important to note that the working of the JAN2N2905 transistor is based on the variation of the forward voltage gain of the transistor. This gain is dependent on the ratio between the collector current and the base current. In fact, this ratio affects the current gain of the transistor and thus, determines the output voltage across the collector and emitter terminals. It should also be noted that the gain of the JAN2N2905 transistor is also determined by the amount of current converted from the base to the collector.

Finally, it is important to understand the importance of the frequency response of the JAN2N2905 transistor. When the frequency of the input signal is increased, the output frequency of the transistor also increases. This is due to the fact that, when the frequency of the input signal increases, the amount of current flowing between the collector and the emitter also increases. This increase in current results in a higher frequency at the output terminal, which is known as the frequency response of the transistor. As such, the frequency response of the JAN2N2905 transistor can be used to accurately determine the frequency range of the input signal.

In conclusion, the JAN2N2905 transistor is a single bipolar transistor that is often used in applications such as amplifiers, switches, level detectors and signal controllers. The key principle of working of the JAN2N2905 transistor is the recombination-diffusion process. Furthermore, the output voltage across the collector and emitter terminals of the transistor is affected by the ratio between the collector current and the base current. Lastly, the frequency response of the transistor is used to accurately determine the frequency range of the input signal.

The specific data is subject to PDF, and the above content is for reference

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