Allicdata Part #: | 1086-16213-ND |
Manufacturer Part#: |
JAN2N657S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 100V 0.02A |
More Detail: | Bipolar (BJT) Transistor NPN 100V 20mA Through H... |
DataSheet: | JAN2N657S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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The JAN2N657S is a single, NPN bipolar junction transistor (BJT) designed for general-purpose low-power amplification and switching applications. The JAN2N657S is capable of switching up to 25V and can handle high peak currents. It is available in 4 packages: TO-92, TO-225AA, TO-251 and SOT-23-3. Commonly used in audio amplifiers, small radio frequency (RF) stages, high gain amplifiers, switched-mode power supplies, and many other low-power applications.
Bipolar junction transistors (BJTs) are three-terminal devices consisting of two P-N junctions making up a transistor structure. The three terminals can be named in different ways but are commonly referred to as the Collector (C), Base (B), and Emitter (E). The BJT is a type of current-controlled device and can be used either as an amplifier or switch depending on the biasing conditions applied to it.
When the device is acting as an amplifier, it is said to be in the active region. Here, the BJT is biased in a way which allows the current flowing through the device to be controlled by the current which flows into (or out of) the base terminal. This current is referred to as the ‘base current’.
When the BJT is acting as a switch, it is said to be in the cut-off region. Here, the bias is adjusted such that the base current is much smaller than the current through the Collector-Emitter junction (hence, the transistor is said to be ‘off’).
In the cut-off region, the JAN2N657S devices can still be used as a switch, but only if the devices are switched on (i.e. the base current is increased). This process is known as ‘saturation’ and allows the device to be used as an efficient switch.
The JAN2N657S can also be used in ‘common-emitter’ and ‘common-collector’ configurations, which enhance its ability to act as an amplifier or switch, depending on the biasing conditions applied. In a common-emitter circuit, the base-emitter junction is forward-biased, while the collector-emitter junction is reverse-biased. This configuration allows the device to act as a voltage amplifier, with the Collector being at a higher potential than the emitter and the base being at a lower potential.
In a common-collector circuit, the collector is connected directly to the load while the base is connected to the input signal. This configuration allows the device to act as a current amplifier, where the Collector-Emitter current is proportional to the Base current. Since the Collector current is larger than the Base current, the device can be used to boost the output current of an amplifier.
The JAN2N657S is also suitable for use in transistor radio references, oscillators, small RF amplifiers, emitter followers, and other low-frequency applications. Care should be taken to ensure the device is properly biased in order to achieve the desired results. Additionally, the junction temperatures within the device should be monitored in order to prevent the device from entering thermal runaway and damaging itself.
The specific data is subject to PDF, and the above content is for reference
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