JAN2N697 Allicdata Electronics
Allicdata Part #:

1086-16215-ND

Manufacturer Part#:

JAN2N697

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 40V
More Detail: Bipolar (BJT) Transistor NPN 40V 600mW Through H...
DataSheet: JAN2N697 datasheetJAN2N697 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/99
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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JAN2N697 is a type of single bipolar junction transistor (BJT). It is widely used in consumer electronics and communications applications due to its low bias collector-emitter voltage, low power dissipation and high frequency performance. This article discusses its application field and working principle.

The JAN2N697 transistor is widely used in consumer electronic and communication circuits owing to its low bias collector-emitter voltage and high frequency performance. It is mainly used in low power audio amplifiers, small-signal amplifiers, switching circuits and oscillators. It can also be used in RF amplifiers, voltage regulators, power supply circuits and timer circuits.

The device\\'s construction consists of two layers of silicon-based semiconductors. The base layer consists of a thin N-type layer and the emitter layer consists of a thicker P-type layer. An N-type depletion junction is formed between the base and the emitter. The collector layer is made up of an N-type silicon wafer, which is doped with an appropriate amount of beryllium. All these layers are bonded together using an epoxy-based adhesive material and an aluminium plate, called the bonded plate.

The working of the JAN2N697 is based on the principles of two-step process of BJT. It works by the biasing voltage applied to the base layer and the emitter layer acts as a conduit between the biasing voltage and the collector layer. When the biasing voltage is applied to the base layer, a small current passes through the base-emitter junction, which is called the "forward biasing" current. This current activates the process of electron release from the emitter and hence radiation from the collector. The radiation collected by the collector is amplified and the amplified signal can then be used to drive an external amplifier circuit.

The principal advantage of using the JAN2N697 is that it is capable of operating over a wider range of temperatures, due to its lower collector-emitter voltage. Furthermore, it also has an extremely low power dissipation which further reduces the device power requirements, allowing it to be used in a variety of applications.

In conclusion, the JAN2N697 single bipolar junction transistor is extremely versatile and is suitable for a range of applications in consumer electronics and communication circuits. It can be used in amplifiers, voltage regulators, power supply circuits and timer circuits, as well as in RF amplifiers and oscillators. Its principal advantages are its ability to operate over a wide range of temperatures and its low power requirements.

The specific data is subject to PDF, and the above content is for reference

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