| Allicdata Part #: | 1086-16167-ND |
| Manufacturer Part#: |
JAN2N5683 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 60V 50A TO-3 |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 50A 300W Through... |
| DataSheet: | JAN2N5683 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | Military, MIL-PRF-19500/466 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 50A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 5V @ 10A, 50A |
| Current - Collector Cutoff (Max): | 5µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 25A, 2V |
| Power - Max: | 300W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-204AA, TO-3 |
| Supplier Device Package: | TO-3 (TO-204AA) |
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JAN2N5683 is an NPN silicon monolithic planar medium-power transistor, which belongs to the Bipolar Junctions Transistors (BJT) category. It is a single transistor device, commonly used in amplification applications due to its good gain characteristics. It is manufactured by reputed companies such as Fairchild Semiconductor and Motorola.
The maximum collector dissipation used by this transistor is 0.5 watts, and its collector-emitter voltage is between 12 V and 80 V. It features a maximum current gain of 50 at 10 V collector-emitter voltage. The maximum operating temperature of JAN2N5683 is 150 C, and its frequency range is up to 350 MHz.
JAN2N5683 has wide application in various manufacturing, industrial, and consumer electronics. Its main applications include amplification circuits and switching circuits. It is especially useful for circuits requiring low noise and high gain, as it provides good gain characteristics at low noise levels. It is also suitable for switching and amplification of various analog and digital signals.
JAN2N5683 works on the principle of bipolar junction technology. It is a three-terminal device with the base, collector, and emitter terminals. The base terminal is used to control the current between the collector and emitter terminals. By applying a small current to the base terminal, the transistor can be made to conduct or stop current flow, thus providing an efficient way of controlling the current in the circuit. When current passes through the base terminal, it is converted into a large current between the collector and emitter terminals. This process is known as current amplification and is responsible for the high gain of JAN2N5683.
In addition to its wide application scope, JAN2N5683 also offers various other benefits. It is environmentally friendly, as it does not contain any toxic components. It is also relatively low cost and requires minimal additional components for operation. JAN2N5683 also has a good reputation for excellent performance and reliable operation, providing the user with the assurance of reliable quality.
JAN2N5683 is a versatile and reliable transistor device designed to provide quality performance in a wide range of applications. It is an excellent choice for amplifying and switching applications due to its good gain characteristics at low noise levels, low cost, and environmental friendliness. Its wide application scope and reliable operation make it an excellent choice for various industrial and consumer electronics projects.
The specific data is subject to PDF, and the above content is for reference
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JAN2N5683 Datasheet/PDF