Allicdata Part #: | 1086-2339-ND |
Manufacturer Part#: |
JAN2N2946A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 35V 0.1A TO46 |
More Detail: | Bipolar (BJT) Transistor PNP 35V 100mA 400mW Thro... |
DataSheet: | JAN2N2946A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/382 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 1mA, 500mV |
Power - Max: | 400mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AB, TO-46-3 Metal Can |
Supplier Device Package: | TO-46 |
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The JAN2N2946A is a single transistor as classified by bipolar junction transistors (BJT). It has high voltage capabilities, making it applicable for use in a variety of applications. This article will provide a detailed explanation of the applications and working principles of the JAN2N2946A.
Applications
The JAN2N2946A is characterized as a high-voltage and high-frequency transistor. Its wide range of voltage gain, high current gain, and low noise make it versatile enough to accommodate different types of circuits.
The JAN2N2946A can be used in a variety of circuits, including power amplifiers, motor control, and power supplies. It can also be used in audio output amplifiers and other analog circuits, due to its high current gain and low noise characteristics.
Due to the high voltage capabilities of the JAN2N2946A, it can also be used in various high voltage power applications. This includes radio transmitters, antenna amplifiers, and oscillators.
Working Principle
The JAN2N2946A is a bipolar junction transistor (BJT). It is made up of three layers of semiconductors – a P-type semiconductor, an N-type semiconductor, and a P-type semiconductor. In a BJT, the layer between the N and P layers is called the base layer. The base layer is where the majority of the current gain and voltage gain takes place.
The JAN2N2946A is a three-layer device. It has a collector layer, base layer, and emitter layer. The base layer of the JAN2N2946A is where most of the current gain and voltage gain takes place. In a BJT, the current gain is determined by the ratio of the current flowing through the collector to the current flowing through the base (the hFE or α ratio). The voltage gain is determined by the ratio of the voltage at the collector to the voltage at the base (the β or hfe ratio).
The JAN2N2946A is characterized as a high-voltage and high-frequency transistor due to its high current and voltage gain capabilities. It is capable of operating over a wide frequency range, which makes it suitable for use in circuits operating at high frequencies. Its high current gain and low noise characteristics make it ideal for use in power amplifier and audio amplifier circuits, as well as other analog circuits.
Conclusion
The JAN2N2946A is a single transistor, classified under bipolar junction transistors (BJT). This article has outlined the applications and working principle of the JAN2N2946A. It is a high-voltage and high-frequency transistor and can be used in power amplifiers, motor control, and power supplies. Due to its high current gain, low noise characteristics and wide range of voltage gain, it is suitable for use in various high-frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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