![JAN2N2218A Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1086-20665-ND |
Manufacturer Part#: |
JAN2N2218A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 50V 0.8A TO39 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 800mW Thro... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/251 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
Power - Max: | 800mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 (TO-205AD) |
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The JAN2N2218A is a NPN silicon planar medium-power transistor included in the single-bipolar transistor category. This transistor is commonly used in a variety of electronic applications, such as signal amplification, switched circuits, fuzz circuits, and more. To understand the JAN2N2218A and its application field, one must first look at its working principle.
The JAN2N2218A is a two-terminal, three-layer semiconductor device. It consists of two active regions, the base and collector. Both the base and collector are composed of four sublayers of materials, with an antibonding gap in between them. The four layers that make up the base are called an emitter, base, collector, and anode. The emitter layer carries a majority n-type carrier concentration and the collector layer carries a majority p-type carrier concentration.
This device works by allowing electrons to flow through it via the emitter-base junction, which is formed when the base is negatively charged and the collector is positively charged. As current enters through the emitter, it crosses the junction, and then enters the collector. This forms the current flow between the two terminals. When the base has sufficient current, it forms a closed circuit, thus allowing current to flow between the collector and emitter.
As for the application field of the JAN2N2218A, it is primarily used in audio amplifiers, opto-electronic applications, and oscillators. In audio amplifiers, it helps to amplify low level audio signals and is designed to produce low-noise operation. In opto-electronic applications, it is used as photo-detector components. Finally, it is used in oscillator circuits, as it is particularly useful in providing a stable voltage and current level over a wide range of frequencies.
The JAN2N2218A is able to function reliably in a wide variety of electronic applications, which makes it a useful device for a range of different industries. In addition to its application field, the device’s working principle makes it an effective device, allowing signals to be amplified or detected easily and quickly. As a result, the JAN2N2218A is a popular device for audio, opto-electronic, and oscillator circuits.
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JAN2N6796 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6796U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6798 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
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JAN2N6800 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6800U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6802 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6802U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
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