| Allicdata Part #: | 1086-16204-ND |
| Manufacturer Part#: |
JAN2N6353 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN DARL 150V 5A TO-33 |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 150V 5A ... |
| DataSheet: | JAN2N6353 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/472 |
| Packaging: | Bulk |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 150V |
| Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 10mA, 5A |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 5V |
| Power - Max: | 2W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-213AA, TO-66-3 |
| Supplier Device Package: | TO-66 (TO-213AA) |
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JAN2N6353 is a type of bipolar junction transistor (BJT), which is a three-terminal semiconductor device used to amplify current or switch electrical signals. It belongs to the Single Bipolar Transistor category, which means that it has one base and two terminals - collector and emitter.
The JAN2N6353 is composed of a NPN silicon epitaxial planar construction, meaning that it is built in layers, with the base or collector being closest to the junction of the two layers, and the emitter, the last layer. Such an arrangement makes it suitable for both low-power linear and switching applications.
The JAN2N6353 offers several advantages, such as low noise and minimum distortion when used to amplify signals, and ability to switch currents of up to 500 mA. It is also reliable, with an operating temperature range from -55°C to 150°C and a maximum power dissipation of 350mW. Its small size make it a suitable choice for use in miniature circuits.
When used in an amplification circuit, the JAN2N6353 works by controlling the current which flows between its emitter and collector based on the voltage at the base. The base-emitter junction acts like a resistor, with the higher the base voltage, the greater the current between the emitter and collector. Conversely, the lower the base voltage, the lesser the current between the emitter and collector. This cycling of the current is what amplifies the signal.
In a switching application, the JAN2N6353 works in a similar fashion, but with the collector-emitter voltage operating as the control. When the base voltage is low, the collector-emitter voltage is low, and the current does not flow in the circuit. When the base voltage is increased, the collector-emitter voltage is increased, and the current switch is opened, allowing the current to flow in the circuit.
The JAN2N6353 is an ideal choice for low-power linear and switching applications, offering a wide temperature range, low distortion and high current capabilities. Its small size also makes it suitable for use in miniature circuits, making it a versatile device that can meet many of today\'s electronic requirements.
The specific data is subject to PDF, and the above content is for reference
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JAN2N6353 Datasheet/PDF