JAN2N2905A Allicdata Electronics
Allicdata Part #:

1086-2332-ND

Manufacturer Part#:

JAN2N2905A

Price: $ 10.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 0.6A TO39
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 800mW Thro...
DataSheet: JAN2N2905A datasheetJAN2N2905A Datasheet/PDF
Quantity: 1000
100 +: $ 9.48374
Stock 1000Can Ship Immediately
$ 10.43
Specifications
Series: Military, MIL-PRF-19500/290
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Description

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Introduction:

The JAN2N2905A is a Bipolar Junction Transistor (BJT), single and NPN, specifically manufactured by Micro Commercial Components Corporation. It is an epitaxial planar base PNP transistor, designed for high-speed switching applications.

Application Fields:

The JAN2N2905A can be used for a wide range of applications given its high performance features. It is designed for switching and driving applications such as logic drivers, power drivers and amplifiers. It can also be used in applications such as display drivers, interface circuits, general purpose switching and power transistors, making fairly versatile and application specific.

Working Principle:

The JAN2N2905A works on the principle that a current applied to the base-emitter junction will produce a current flowing from the collector-emitter terminals. This is known as current gain. When a small current is applied to the base of the BJT, a much larger and amplified current will flow from the collector to the emitter, passing through the T-shaped element of the BJT structure. This amplification occurs due to the interaction of the charge carriers (electron and holes) between the base and collector elements which maximize current gain and voltage gain.

Conclusion:

The JAN2N2905A is a single NPN Bipolar Junction Transistor (BJT) manufactured by Micro Commercial Components Corporation. It is designed for high speed switching applications and is a very versatile and application-specific transistor. It is widely used for applications such as logic drivers, power drivers, amplifiers, display drivers, interface circuits and general purpose switching and power transistors. Working on the principle that a current applied to the base-emitter junction will produce a current flow through the collector-emitter terminals, the JAN2N2905A can easily and effectively amplify current and voltage for higher performance requirements.

The specific data is subject to PDF, and the above content is for reference

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