Allicdata Part #: | JAN2N6766T1-ND |
Manufacturer Part#: |
JAN2N6766T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-254AA |
More Detail: | N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | JAN2N6766T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/543 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-254AA |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
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The JAN2N6766T1 is a silicon N-channel junction field effect transistor (JFET) designed for use in many analog switching, amplifying, and speech applications. This device features a low RDS(on) (resistance-drain-source), rugged construction, and high input impedance which make it suitable for a wide range of industrial and consumer applications.
JAN2N6766T1 devices are classified as Single FETs (Field Effect Transistors) in the Transistors - FETs, MOSFETs category. The JAN2N6766T1 is an N-channel type, meaning the channel is made of an N-type semiconductor material.
In its most basic application, these transistors act as a switch. It is able to control a large amount of current using a small amount of electrical input. In this way, it acts as an amplifier as well.
When a small amount of voltage is applied to the gate terminal of the JAN2N6766T1, it creates an electric field around the gate which attracts the electrons in the N-type semiconductor material. This movement of electrons creates an "inversion layer," or a layer of electrons near the surface of the semiconductor material. These inversion layers work as a conductor, allowing electrons to flow from source to drain.
The JAN2N6766T1 also works as an amplifier. As the input voltage is applied to the gate terminal, the thickness of the inversion layer is also affected. The thicker the inversion layer, the lower the amount of current flowing through the channel. Therefore, if a small amount of input voltage is applied to the gate, it can control a larger amount of current in the channel.
The JAN2N6766T1 is just one type of FET available in the Transistors - FETs, MOSFETs category. There are many types of FETs available depending on the application.
These devices are used in a wide variety of applications, such as RF amplifiers, switching circuits, level trimming, and more. They are widely used in communication systems, consumer electronics, medical devices, and other industries.
The JAN2N6766T1 is designed with robust construction and high input impedance, making it suitable for many industrial and consumer applications. This makes it a popular choice for engineer when designing circuits for a wide range of applications.
In conclusion, the JAN2N6766T1 is a great choice for many applications requiring an Analog Switch, Amplifier and Speech applications. Its capabilities and robust construction make it a wise choice for engineers looking to optimize performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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