JS28F160C3TD70A

The JS28F160C3TD70A is a non-volatile Flash memory device fabricated using a multilevel-cell NAND Flash process technology. It is a member of the MD28F family of low power, high speed, high density memory devices. The JS28F160C3TD70A is a monolithic, single-chip device. It is organized as two equal-sized blocks of memory cells, with each block having its own erase register, data register, and control circuitry. The erase and data registers are connected to two separate sets of address lines.

The JS28F160C3TD70A Flash memory device operates using a single power supply. It typically operates with a supply voltage of 2.7V to 3.3V with standard operating temperature of 0°C to +70°C. The device also supports up to 10MHz clock frequencies on the output data and program confirm, making it suitable for high speed application requirements. It is also capable of operating at upto 312MHz under extreme temperature conditions.

The JS28F160C3TD70A of the MD28F family of Flash memories offer a wide range of high speed programming, block erase, page erase, and page read functions. The page erase and page read operations take approximately 6 μs for the device to complete. The block erase operations take approximately 2 ms for the device to complete. The device also supports simultaneous operations.

The JS28F160C3TD70A Flash memory device is used in many applications. These include consumer electronics and automotive, industrial and aerospace applications that require non-volatile memory and high performance operations. The device is suitable for embedded applications that require low power consumption, high data integrity, and non-volatility of data.

The working principle of the JS28F160C3TD70A Flash memory device is relatively simple. It uses electrically programmable, erasable, and read-only memory cells that are etched into a single monolithic silicon chip. The memory cells are organized into blocks and pages, each block containing many pages of data. Data blocks and pages can be programmed and erased while the normal operation of the Flash memory device remains unaffected.

The programming and erasing functions of the device are controlled using control signals, address pins, and data pins. When a single page is programmed or erased, the other pages within the same block remain unaffected. This design helps maintain data integrity while allowing the device to operate at high speeds. Moreover, multiple blocks can be simultaneously programmed and erased in order to further increase the performance of the device.

In summary, the JS28F160C3TD70A Flash memory device is a highly reliable, low power and high performance solution for non-volatile memory applications. It operates using a single supply voltage with a wide range of programming and erase operations available at high speed. It is also suitable for embedded applications that require low power consumption and high data integrity.