Allicdata Part #: | JS28F128J3D75A-ND |
Manufacturer Part#: |
JS28F128J3D75A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par... |
DataSheet: | JS28F128J3D75A Datasheet/PDF |
Quantity: | 1000 |
Series: | StrataFlash™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8, 8M x 16) |
Write Cycle Time - Word, Page: | 75ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F128J3 |
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Memory is an essential part of most computing systems. A variety of memory types exist to meet the specific needs of the application. One such type is the JS28F128J3D75A, a 128-Mb Multi-Level Cell (MLC) NOR Flash memory from STMicroelectronics. This device is designed for a variety of embedded applications.
The JS28F128J3D75A combines advanced memory features and an enhanced process architecture to provide an optimized solution. It is an ideal choice for applications that require low power consumption and reliable non-volatile memory storage. It is well suited for automotive, industrial, and medical applications.
Working principle
The JS28F128J3D75A uses the multi-level cell (MLC) structure to store information in each cell. This structure allows multiple bits to be stored per cell, thereby increasing the memory density. Each memory cell is composed of two sections, called the bit line and the ground line. The bit line is used to store data and the ground line is used to carry out operations on the data stored in the cell.
Data is stored in the memory cell by applying a voltage differential between the bit line and the ground line. This voltage differential is sensed by the memory cell and determines the state of the bit stored in the cell. When the voltage differential is higher, the bit is considered "1," and when the voltage differential is lower, the bit is considered "0." Data is retrieved from the memory cell by sensing the voltage differential on the bit line. Depending on the detected differential, the bit is then interpreted as either a "1" or a "0".
Application field
The JS28F128J3D75A can be used for a wide range of embedded applications. It is suitable for automotive engine control systems, automotive audio and infotainment systems, industrial controllers, and medical devices. It is also used in digital cameras and portable devices such as MP3 players, PDAs, and digital video players.
Additionally, the device is well suited for applications in the consumer electronics field, such as televisions, game consoles, and DVD players. Its small size and low power consumption make it well suited for portable consumer electronics. Its cost effective price makes it attractive for consumer products.
The JS28F128J3D75A is also suitable for applications in the telecommunications industry, such as mobile and wireless networks, base station systems, and telecommunication switches. Its low power consumption and cost make it an attractive solution for these applications.
In summary, the JS28F128J3D75A is a highly versatile device that can meet the needs of many embedded applications. Its small size and low power consumption make it attractive for a wide range of markets and applications. Combined with its robust architecture and improved process technology, the JS28F128J3D75A is an ideal choice for embedded transceiver and memory systems.
The specific data is subject to PDF, and the above content is for reference
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