Allicdata Part #: | JS28F256J3F1058TR-ND |
Manufacturer Part#: |
JS28F256J3F1058 TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa... |
DataSheet: | JS28F256J3F1058 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (32M x 8, 16M x 16) |
Write Cycle Time - Word, Page: | 105ns |
Access Time: | 105ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
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The JS28F256J3F1058 TR is a handheld, 16 MB flash memory device developed by Micron. It is a non-volatile NAND flash memory integrated device that uses both the SLC and MLC types of flash memory and offers various levels of endurance and performance optimization.
The JS28F256J3F1058 TR is applicable in a diverse array of applications and is used in automotive, industrial and consumer applications where endurance and performance are key factors. It can be used in a variety of on-board applications including cameras, drones, automotive displays and in-vehicle infotainment, health monitoring, and IoT systems.
Features
The JS28F256J3F1058 TR features robust data protection measures, enabling it to protect data for up to five years. The device includes a static data refresh which means that data can be refreshed every few seconds and offers an additional layer of protection. It is also compatible with various operating temperature profiles, meaning that it is able to emulate a low temperature operating profile when used in extreme temperature environments.
It is a highly reliable, low power NAND flash memory device and provides a long product life. The device is designed to be compatible with the advanced, low voltage NAND interface and is capable of sustaining high operating speeds without loss of performance due to environmental factors. It also features an automated power reduction mode, allowing for extended battery life.
Working Principle
The JS28F256J3F1058 TR uses a static charge leakage technique to protect data. This technique uses a static defect management method to keep defective cells in a set state where they cannot be utilized. By utilizing this technology, the device is able to reduce both device power and endurance in order to extend product life.
The device also features a digital SoC module that enables it to function as a “smart” memory device. This SoC module continuously performs background tasks such as error correction and routine maintenance, allowing the device to automatically detect and correct faults that arise during operation.
The JS28F256J3F1058 TR is a highly reliable and low power memory device, offering superior endurance and performance to meet the requirements of today\'s high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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