Allicdata Part #: | JS28F256P30BFA-ND |
Manufacturer Part#: |
JS28F256P30BFA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40... |
DataSheet: | JS28F256P30BFA Datasheet/PDF |
Quantity: | 1000 |
Series: | StrataFlash™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F256P30 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JS28F256P30BFA is a high-density nonvolatile Flash Memory that has quickly become a popular choice for embedded systems and other applications requiring fast and reliable storage options. It offers users the perfect balance between capacity, performance and cost, enabling them to quickly access large amounts of data without sacrificing performance or reliability.
In terms of technical specifications, the JS28F256P30BFA is a single-transistor nonvolatile memory that can be configured to provide up to 32K 32-bit words of data storage. It offers advanced features, such as error correction, sector protection, write protection, data scrubbing, and program verification. Its high-quality logic design ensures reliability, while its small cell size and low power consumption make it ideal for portable devices.
The JS28F256P30BFA is primarily used in embedded systems, such as medical and consumer electronics, where its nonvolatile memory allows the device to retain its contents even if power is lost. It is also used in automotive, aerospace, and communications applications, where its high speed, reliability, and low power consumption make it an ideal choice.
In terms of its working principle, the JS28F256P30BFA depends on tunnel-oxide tunneling technology to store data. The tunnel oxide layer of the memory is composed of two conducting layers, a conductive and an transparent layer. When stimulated with a voltage, electrons will tunnel from the transparent layer to the conductive layer, thereby storing data. This principle requires less current and power consumption, making it ideal for small, portable devices.
The JS28F256P30BFA is also known for its fast access times and high-speed interface capabilities. Its high-speed synchronous burst interface enhances overall system performance by enabling multiple transfers at a higher rate than conventional memory interfaces. This makes it suitable for even the most complex and data-intensive applications.
Overall, the JS28F256P30BFA is a reliable and cost-effective solution for embedded systems, automotive and aerospace applications, and other data storage needs. Its features and high speed and reliability make it ideal for devices that require large amounts of data storage. Additionally, its low power consumption and small cell size further make it perfect for portable and miniature devices.
The specific data is subject to PDF, and the above content is for reference
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