Allicdata Part #: | JS28F640P30T85A-ND |
Manufacturer Part#: |
JS28F640P30T85A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 40MH... |
DataSheet: | JS28F640P30T85A Datasheet/PDF |
Quantity: | 1000 |
Write Cycle Time - Word, Page: | 85ns |
Base Part Number: | 28F640P30 |
Supplier Device Package: | 56-TSOP (14x20) |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TA) |
Voltage - Supply: | 1.7 V ~ 2 V |
Memory Interface: | Parallel |
Access Time: | 85ns |
Series: | StrataFlash™ |
Clock Frequency: | 40MHz |
Memory Size: | 64Mb (4M x 16) |
Technology: | FLASH - NOR |
Memory Format: | FLASH |
Memory Type: | Non-Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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JS28F640P30T85A Application Field and Working Principle
JS28F640P30T85A is part of the Intel\'s Automotive and Enterprise Flash-Memory family, this component is a NOR Flash-Memory product. This device provides a high density of Flash-Memory for high-end performance applications. It is mainly used in embedded systems, automotive control systems, consumer electronics, and industrial and medical applications.
The JS28F640P30T85A is an 8-megabit static RAM (SRAM) and an 8-megabyte Flash memory cell. This product is an advanced drawing 82FV45P30T85A by Intel. It is organized in 2048 blocks composed of 16384 words. It provides industry-standard organization, excellent single-bit reliability and superior Flash-to-SRAM performance.
Working Principle
The JS28F640P30T85A NOR Flash-Memory device operates using a network of transistors, resistors, and diodes. These structures represent the transistors and other electronic components that make up the device. Each cell contains a memory structure which stores the bit information. The cell is connected to the address bus, data bus, and control outputs. When the address sequence is sent from the memory controller, a transistor at the cell will be enabled and the data stored in the cell is sent out to the controller.
The JS28F640P30T85A can be split into four blocks (1,2,3 & 4). Each block consists of two halves, which can be operated independently. Each block has its own memory space, which will reside in different locations on the same device. Each block consists of two rows of data (A and B). When the address sequence is sent from the memory controller, the enabled transistor will activate and send out the data stored in either row A or B. To select either row A or B, the memory controller should send the appropriate address sequence.
One of the main features of the JS28F640P30T85A is its power consumption. The device features a low power consumption, which enables its application in battery operated systems. It has four operating modes, standby, active, write and read. The operating mode is selected by the controller. The maximum read/write current of the device is 7mA at 3.3V, 7.5mA at 5V, and 10mA at 6V.
The JS28F640P30T85A has a wide range of features that make it suitable for a variety of applications. It has high speed read/write capability, which makes it suitable for applications that need to access the flash memory quickly. It also has error detection and correction capabilities, which ensures that data is read and written correctly. It also has a power fail protection feature which ensures that data is not lost due to power fluctuations.
In summary, the JS28F640P30T85A is a high performance, low power NOR Flash-Memory device that is suitable for a wide range of applications. It has high speed read/write capability, error detection and correction, and power fail protection, making it an ideal solution for a variety of applications where high performance and reliable performance are essential.
The specific data is subject to PDF, and the above content is for reference
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