Allicdata Part #: | JS28F256P30TFA-ND |
Manufacturer Part#: |
JS28F256P30TFA |
Price: | $ 24.62 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 56TSOPFLASH - NOR Memory IC... |
More Detail: | N/A |
DataSheet: | JS28F256P30TFA Datasheet/PDF |
Quantity: | 600 |
1 +: | $ 24.62000 |
Series: | StrataFlash™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F256P30 |
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JS28F256P30TFA is a type of non-volatile memory, a member of the ETOX™ 28 family of flash memories. It is specifically designed for a broad range of embedded system applications. The memory block is based on Intel's high performance and cost-effective ETOX™ flash technology. It is available in multiple package and temperature range options to suit the needs of many different applications.
The JS28F256P30TFA enables high-density memory storage and fast program time for embedded system designs. Its capability to store thousands of bytes of information makes it the ideal choice for applications needing to store large amounts of data. This non-volatile memory supports data persistence, allowing the user to retain the integrity of their data even when the power is turned off.
The JS28F256P30TFA memory block is available in both 15 mil and 20 mil packages, with a temperature range of -40°C to +85°C. It is designed for a Vcc operating range of 2.4 - 3.6V. The device is optimized to reduce system cost and enable fast programming of code. The JS28F256P30TFA has a extend range of access times and higher erase/program cycles than standard ETOX devices. It is ideal for applications requiring small form factor and low power consumption.
The technical features of the JS28F256P30TFA are provided in this table:
Package | 15 mil or 20 mil |
Vcc Operating Range | 2.4 - 3.6 V |
Temperature | -40°C to +85°C |
Access Times | delay of 120ns |
Program Time | 2.0us (min) per byte |
Erase/Program Cycles | 1000 (min) |
Data Retention | 100 years (typ) |
The JS28F256P30TFA comes with a wide range of features, making it suitable for a variety of embedded system applications. These applications include: mission critical systems, industrial control systems, automotive systems, networking and communication systems, and aerospace systems.
The working principle of the JS28F256P30TFA memory block is based on the use of flash memory cells which store data using Fowler-Nordheim Tunneling. When a voltage is applied across the cell, electrons tunnel through the oxide layer and get stored in the floating gate. This allows the cell to store data bits that represent ones and zeros. The memory block uses these tiny memory cells to store data. This data can be read and written using special commands on the flash memory.
The JS28F256P30TFA memory block allows users to store data in a non-volatile memory which is then retained when the power is turned off. With the use of this non-volatile memory block, the user can store and retrieve data quickly and easily. The memory block is also very rugged and reliable, making it suitable for a wide range of applications. With its low power consumption and small form factor, the JS28F256P30TFA is an excellent choice for today’s embedded system applications.
The specific data is subject to PDF, and the above content is for reference
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