JS28F256M29EWHA

Base Part Number:	28F256M29EW
Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (32M x 8, 16M x 16)
Write Cycle Time - Word, Page:	110ns
Access Time:	110ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	56-TSOP (14x20)

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JS28F256M29EWHA which is based on advanced NAND flash memory technology is perfect for embedded applications, especially where high reliability and low power consumption are required. It is not only used in highly reliable demanding applications such as cell phones and data storage devices, but also in the military,industrial applications, automotive, medical and other fields. • 256M-bit of flash memory with page size of 2K byte as well as number of blocks of 2048. • Supports I/O Interface : 8-bit x 8-bit Advanced Address Bus / 8-bit Data Bus.• Operating voltage of 1.8V. • High speed performance: minimum access time of 50ns for read mode and 60ns for program mode. • High reliability and data retention of 20 cummulative years. • Flexible memory architecture with reserved area for emergency firmware recall. • Cost effective and low pin out package The JS28F256M29EWHA is an advanced flash memory that uses an 8-bit address bus, an 8-bit data bus, and multiple control signals to manage read, program and erase operations. It utilizes two major operations, internal erasing and programming, to store and retrieve digital data from the flash memory. In the internal erasing operation, all the bits of a memory block are set to 1 before programming begins. During the programming operation, bits in the selected block are programmed to 0 by applying the appropriate voltage to the bit line. The programming operation is repeated many times to achieved a desired content of the memory block. In the read operation, a specific memory block is selected via the address pins. Then, the content of the selected block is transferred onto the output data bus. In overall, the JS28F256M29EWHA flash memory is optimized to deliver reliable read, program, and erase operations in NAND type format.

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