JS28F064M29EWHA

Memory: JS28F064M29EWHA Application Field and Working Principle

The JS28F064M29EWHA is a low-pin-count, 64Mbit (8Mbytes) flash memory device that is organized as 4MBytes x 16bits. This memory device is ideal for any application that requires large memory density at a cost-effective price.

The main features of the JS28F064M29EWHA are that it is pin- and package-compatible with the JS28F064M29EWHA, allowing for easy upgrades and/or replacements and offers an advanced read/write algorithm for improved memory performance.

This product is ideal for use in embedded systems that require increased memory for data storage and critical code storage, as well as for storing measurements, sensor data, upload/download information, and system status information.

Application Fields

• Automotive
• Consumer Electronics
• Imaging
• Industrial Control and Automation
• Medical
• Networking and Telecom
• Security

Working Principle

The working principle of JS28F064M29EWHA is based on the concept of charge trapping, which takes advantage of the properties of an electrically erasable programmable read-only memory (EEPROM) cell. The charge trapping cell is composed of a floating gate oxide layer and a control gate oxide layer. The floating gate oxide layer serves as a storage capacitor that is able to store charge from an electrostatic field generated by a write gate. When a write is enabled, the write gate generates a large electrostatic field that charges or discharges the floating gate oxide layer. This results in the storage of a bit of information.

When a read is required, the charge stored in the floating gate oxide layer determines whether the cell conducts current or not. This allows for the reading of the data stored in the cell. The charge that is traps in the floating gate oxide layer can either be electrically discharged or electrically programmed.

In addition to the write and read capability, the JS28F064M29EWHA is also capable of providing an erase of the entire memory array. The erase operation is accomplished by raising the oxide gate\'s bias voltage to a certain level, which results in the discharge of the floating gate oxide layer. The erase operation is conducted through the erasing of the entire memory array or by selectively erasing individual blocks of memory.

Conclusion

The JS28F064M29EWHA is a low-pin count, 64Mbit (8Mbytes) flash memory device that is highly reliable and cost-efficient. It is ideal for applications that require large memory densities, and is well suited for automotive, consumer electronics, imaging, industrial control and automation, medical, networking and telecom, and security applications.