Allicdata Part #: | JS28F128J3F75H-ND |
Manufacturer Part#: |
JS28F128J3F75H |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par... |
DataSheet: | JS28F128J3F75H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8, 8M x 16) |
Write Cycle Time - Word, Page: | 75ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | JS28F128 |
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JS28F128J3F75H application field and working principle
JS28F128J3F75H is a type of memory chip, which is most commonly used as a non-volatile memory unit in modern electronic systems. It is an electrically erasable programmable read-only memory (EEPROM). This type of memory is suitable for storing firmware, device configuration, and other small amounts of data.
The JS28F128J3F75H chip is widely used in electronic devices because of its excellent electrical performance and low power consumption. It offers fast data access and offers a wide range of operating voltages and frequencies. In addition, it has an endurance rating of up to 10 million erase/write cycles.
The JS28F128J3F75H EEPROM has a parallel mode for data transfers and a serial mode for lower pin counts. It supports a wide range of output voltage levels, including 3.3V, 3.3V with no pull-up, and 5V with a pull-up resistor. This feature makes it suitable for a wide range of applications.
The JS28F128J3F75H chip uses a Flash technology which enables it to retain data even when the power is switched off. Its circuitry consists of two types of transistors, namely N-type and P-type. Each address contains two bits, one for writing and one for erasing the cells. The data is written and erased through a tunneling effect, which causes electrons to tunnel through a thin oxide layer to effectively change the threshold voltage of the cell.
In order to write data, the memory cells must first be erased by applying a high voltage to the erase gate. This erases the entire memory content and sets the threshold voltage level of each cell to its maximum value. Writing data is then achieved by applying a high voltage to the write gate, which causes electrons to tunnel through the thin oxide layer and change the threshold voltage level of the cell.
The JS28F128J3F75H chip is extremely reliable and can be used in a wide range of electronic devices due to its excellent electrical performance, low power consumption, fast data access, and wide range of operating voltages and frequencies. It is also a non-volatile memory unit, making it suitable for storing firmware, device configuration, and other small amounts of data.
The specific data is subject to PDF, and the above content is for reference
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